- Mfr. #:
- IXTH110N10L2
- Description:
- MOSFET L2 Linear Power MOSFET
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXTH110N10L2 Information
1.Please confirm the detail which include the part No. and the manufacturer of the products when ordering.
2.If you have bill of material(BOM) list require to quote. You could send to our email.
3.You can email us to change the order details before shipment.
4. Orders cannot be canceled after shipping the packages.
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Series: | IXTH110N10 |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 99 ns |
| Pd - Power Dissipation: | 600 W |
| Forward Transconductance - Min: | 45 S |
| Factory Pack Quantity: | 30 |
| Typical Turn-On Delay Time: | 28 ns |
| Qg - Gate Charge: | 260 nC |
| Fall Time: | 24 ns |
| Vgs - Gate-Source Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Rise Time: | 130 ns |
| Id - Continuous Drain Current: | 110 A |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.056438 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXTH110N10L2 Price & Stock
IXYS IXTH110N10L2 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Mouser | 747-IXTH110N10L2 | 314 | 89.50 | 82.22 | 81.32 | 74.53 | 74.53 | 2020-03-04T23:40:23Z |
| Digi-Key | IXTH110N10L2-ND | - | 89.50 | 82.22 | 68.16 | 56.66 | 56.66 | 2020-03-05T13:57:18Z |
| Ameya360 | IXTH110N10L2 | - | - | - | 68.62 | 68.62 | 68.62 | 2020-03-05T09:07:02Z |
| Hamilton Americas | IXTH110N10L2 | 16,930 | - | - | - | - | - | 2020-03-03T22:15:55Z |
| LTL Group | 4060397 | 2 | - | - | - | - | - | 2020-03-06T07:59:49Z |
| SPEC | IXTH110N10L2 | 2 | - | - | - | - | - | 2020-02-26T16:02:45Z |
| TME | IXTH110N10L2 | - | 90.19 | 71.52 | 64.23 | 64.23 | 64.23 | 2020-03-06T09:37:01Z |
| Dana Microsystems | IXTH110N10L2 | 336 | - | - | - | - | - | 2020-02-26T04:50:47Z |
| Classic Components | IXTH110N10L2 | 2 | - | - | - | - | - | 2020-03-05T22:21:05Z |
| North Star Micro | IXTH110N10L2 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
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Alternate Names
IXYS has several brands around the world that may have alternate names for IXTH110N10L2 due to regional differences or acquisition. IXTH110N10L2 may also be known as the following names:
- IXYS CORPORATION IXTH110N10L2
- IXY IXTH110N10L2
- IXYS CORP IXTH110N10L2
- IXYS SEMICONDUCTOR IXTH110N10L2
- IXYS Integrated Circuits Division IXTH110N10L2
- IXYS Integrated Circuits/Clare IXTH110N10L2
- IXYS GMBH IXTH110N10L2
- IXYS-DIRECTED ENERGY IXTH110N10L2
- IXYS Integrated Circuits Division Inc IXTH110N10L2
- IXYS SEMICONDUCTOR GMBH IXTH110N10L2
- IXYS (VA) IXTH110N10L2
- IXYS CORPO IXTH110N10L2
- IXYS Semiconducter GmbH IXTH110N10L2
- IXYS SEMICONDUCTOR CORP IXTH110N10L2
- IXYS INTEGCIRCUITS DIV(CLARE) IXTH110N10L2
- IXYS Colorado (IXYS RF Division) IXTH110N10L2
- IXYS SEMICOND IXTH110N10L2
- IXYS Integrated Circuits IXTH110N10L2
- Zilog/IXYS IXTH110N10L2
- IXYSCOR IXTH110N10L2
- Clare/LXYS Corporation IXTH110N10L2
- IXYS-RF IXTH110N10L2
- CP CLAIRE IXTH110N10L2
- Clare (IXYS) IXTH110N10L2
- IXYS CORPORATION|V IXTH110N10L2