- Mfr. #:
- IXTQ82N25P
- Description:
- MOSFET 82 Amps 250V 0.035 Rds
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXTQ82N25P Information
OMO is experienced in sourcing hard-to-find and obsolete parts.
IXTQ82N25P is available at OMO Electronic. Email us to get the quotation lead time and stock availability.
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-3P-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Series: | IXTQ82N25 |
| Channel Mode: | Enhancement |
| Id - Continuous Drain Current: | 82 A |
| Typical Turn-Off Delay Time: | 78 ns |
| Pd - Power Dissipation: | 500 W |
| Width: | 4.9 mm |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Factory Pack Quantity: | 30 |
| Typical Turn-On Delay Time: | 29 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Fall Time: | 22 ns |
| Height: | 20.3 mm |
| Rise Time: | 20 ns |
| Vgs - Gate-Source Voltage: | 20 V |
| Length: | 15.8 mm |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.194007 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXTQ82N25P Price & Stock
IXYS IXTQ82N25P pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Mouser | 747-IXTQ82N25P | 73 | 56.95 | 50.86 | 35.75 | 35.61 | 35.61 | 2019-11-08T22:14:50Z |
| Digi-Key | IXTQ82N25P-ND | - | - | - | 36.28 | 36.28 | 36.28 | 2019-11-09T13:41:06Z |
| Chip One Stop Global | C1S331700027395 | 58 | 46.44 | 42.15 | 37.29 | 37.29 | 37.29 | 2019-11-09T12:41:00Z |
| Distrelec | 17111092 | 58 | 60.20 | 52.96 | 45.02 | 45.02 | 45.02 | 2019-11-10T00:06:27Z |
| Component Electronics | IXTQ82N25P | 6 | 32.29 | 32.29 | 32.29 | 32.29 | 32.29 | 2019-10-24T14:05:15Z |
| GreenTree Electronics | IXTQ82N25P | 6,530 | - | - | - | - | - | 2019-11-06T14:43:13Z |
| TME | IXTQ82N25P | 131 | 36.46 | 28.97 | 26.05 | 26.05 | 26.05 | 2019-11-09T11:06:03Z |
| Dana Microsystems | IXTQ82N25P | 1,975 | - | - | - | - | - | 2019-10-01T16:44:51Z |
| Abacus Technologies | IXTQ82N25P | 400 | - | - | - | - | - | 2019-11-07T23:53:31Z |
| Sierra IC | IXTQ82N25P | Contact | - | - | - | - | - | 2019-09-03T21:05:22Z |
| North Star Micro | IXTQ82N25P | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
AD5242BRUZ1M distributor
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- IXTQ82N25P. IXTK82N25P. N-Channel Enhancement Mode. Avalanche Rated. Symbol. Test Conditions. Maximum Ratings. VDSS. TJ. = 25 C to 150 C. 250.
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- IXTQ82N25P IXYS MOSFET 82 Amps 250V 0.035 Rds datasheet, inventory, & pricing.
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- IXTQ82N25P. Gate Charge (Qg) @ Vgs: 142nC @ 10V, FET Type: MOSFET N-Channel Metal Oxide. Input Capacitance (Ciss) @ Vds: 4800pF @ 25V, FET ...
Alternate Names
IXYS has several brands around the world that may have alternate names for IXTQ82N25P due to regional differences or acquisition. IXTQ82N25P may also be known as the following names:
- IXYS CORPORATION IXTQ82N25P
- IXY IXTQ82N25P
- IXYS CORP IXTQ82N25P
- IXYS SEMICONDUCTOR IXTQ82N25P
- IXYS Integrated Circuits Division IXTQ82N25P
- IXYS Integrated Circuits/Clare IXTQ82N25P
- IXYS GMBH IXTQ82N25P
- IXYS-DIRECTED ENERGY IXTQ82N25P
- IXYS Integrated Circuits Division Inc IXTQ82N25P
- IXYS SEMICONDUCTOR GMBH IXTQ82N25P
- IXYS (VA) IXTQ82N25P
- IXYS CORPO IXTQ82N25P
- IXYS Semiconducter GmbH IXTQ82N25P
- IXYS SEMICONDUCTOR CORP IXTQ82N25P
- IXYS INTEGCIRCUITS DIV(CLARE) IXTQ82N25P
- IXYS Colorado (IXYS RF Division) IXTQ82N25P
- IXYS SEMICOND IXTQ82N25P
- IXYS Integrated Circuits IXTQ82N25P
- Zilog/IXYS IXTQ82N25P
- IXYSCOR IXTQ82N25P
- Clare/LXYS Corporation IXTQ82N25P
- IXYS-RF IXTQ82N25P
- CP CLAIRE IXTQ82N25P
- Clare (IXYS) IXTQ82N25P
- IXYS CORPORATION|V IXTQ82N25P