IXXH100N60B3 Information

Discrete 600V XPT IGBTs

IXYS Discrete 600V XPT Insulated-Gate Bipolar Transistors (IGBTs) are highly rugged, low loss semiconductor devices that are easily configured in parallel. Developed using IXYS' extreme light punch through (XPT) design platform, these new devices feature excellent electrical characteristics which include low typical Vcesat, low typical current fall times, and low typical turn-off energy per pulse values. They demonstrate exceptional ruggedness during switching and under short circuit conditions, achieved through a 10us short circuit safe operating area (SCSOA), dynamic avalanche ratings, and a square reverse bias safe operating area (RBSOA) rated up to the device's blocking voltage. These devices also feature an extended forward bias safe operating area (FBSOA), allowing for a wider operating window as dictated by the power limitations of the device.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Specifications

IXXH100N60B3 Price & Stock

IXYS IXXH100N60B3 pricing and available inventory.

AD5242BRUZ1M distributor

Alternate Names

IXYS has several brands around the world that may have alternate names for IXXH100N60B3 due to regional differences or acquisition. IXXH100N60B3 may also be known as the following names: