Mfr. #:
TGF2929-HM
Description:
RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
Lifecycle:
New from this manufacturer.
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TGF2929-HM Information

TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Specifications

Moisture Sensitive: Yes
RoHS: Y
Packaging: Waffle
Subcategory: Transistors
Development Kit: TGF2929-HM EVB1
Series: TGF
Configuration: Single
Mounting Style: SMD/SMT
Product Type: RF JFET Transistors
Product Category: RF JFET Transistors
Manufacturer: Qorvo
Brand: Qorvo
Transistor Polarity: N-Channel
Transistor Type: HEMT
Technology: GaN SiC
Operating Frequency: DC to 3.5 GHz
Id - Continuous Drain Current: 7.2 A
Vds - Drain-Source Breakdown Voltage: 50 V
Factory Pack Quantity: 25
Gain: 17.4 dB
Pd - Power Dissipation: 140 W
Output Power: 132 W
Part # Aliases: 1135635
Operating Temperature Range: - 40 C to + 85 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 2.8 V
Maximum Operating Temperature: + 85 C

TGF2929-HM Price & Stock

Qorvo TGF2929-HM pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser772-TGF2929-HM25--2393.852393.852393.852020-04-17T20:46:31Z
RFMWTGF2929-HM20-----2020-04-18T09:36:06Z

AD5242BRUZ1M distributor

TGF2929-HM - Qorvo
Qorvo's TGF2929-HM is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail.
TGF2929-HM Datasheet - Qorvo
TGF2929-HM. 100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor. Data Sheet Rev. C, February 2020 | Subject to change without notice. 1 of 19 www.qorvo.
TGF2929-HM Qorvo RF Power Transistor|RFMW
The TGF2929-HM from Qorvo is a 100 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with Qorvo's proven ...
TGF2929-HM Qorvo | Mouser
TGF2929-HM Qorvo RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN datasheet, inventory, & pricing.
TGF2929-HM-EVB Qorvo | Mouser
TGF2929-HM-EVB Qorvo RF Development Tools datasheet, inventory, & pricing.
TGF2929-HM - Qorvo | RF Transistor - everything RF
The TGF2929-HM from Qorvo is a 100 W (P3dB) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz. It provides a linear gain of 17.4 dB and requires a ...
TGF2929-HM - Richardson Electronics
TGF2929-HM. Qorvo. Power Transistor. $375.00. 0 In stock. Qty. Add to Cart. Add to Quote. Add to Compare. Skip to the end of the images gallery. TGF2929-HM.
TGF2929-HM datasheet - DC - 3.5 GHz, 100 Watt, 28 Volt ...
TGF2929-HM DC - 3.5 GHz, 100 Watt, 28 Volt GaN RF Power Transistor. Qorvos TGF2929-HM is a 100 W (P3dB) wideband input pre-matched discrete GaN on ...
TGF2929-HM
The Qorvo TGF2929-HM is a 100 W (P3dB) discrete GaN on. SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with Qorvo's proven ...
TGF2929-HM - Qorvo - Datasheet & Price - FindIC.us
TGF2929-HM datasheet (Qorvo), PDF files:, price:$333.707, distributors:2, TGF2929-HMTGF2929-HM are available.

Alternate Names

Qorvo has several brands around the world that may have alternate names for TGF2929-HM due to regional differences or acquisition. TGF2929-HM may also be known as the following names:

  • QORVO INC TGF2929-HM
  • Qorvo / TriQuint Semiconductor TGF2929-HM