CSD97396Q4M Information

NexFET Power Stage ICs

Texas Instruments NexFET Power Stage ICs are optimized driver ICs with Dual NexFET MOSFETs used in the device. This delivers higher efficiency in a typical high current POL design. With ultra-low Qg & Qgd these devices enable a higher switching frequency with up to double frequency for same power loss versus competitor's devices. This provides improved transient response for less output capacitors that will be needed. There is a reduction in size by up to 1/2 for the output filter (caps & inductor). They come with a unique ground pad leadframe and pinout which simplifies the customers layout and improves operating and thermal performance. These are offered in smaller package versus typical discrete solutions which saves board space.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. Texas Instruments NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Specifications

CSD97396Q4M Price & Stock

Texas Instruments CSD97396Q4M pricing and available inventory.

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Alternate Names

Texas Instruments has several brands around the world that may have alternate names for CSD97396Q4M due to regional differences or acquisition. CSD97396Q4M may also be known as the following names: