- Mfr. #:
- SI5515CDC-T1-E3
- Description:
- MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SI5515CDC-T1-E3 Information
- Integrated MOSFET Solutions
- Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.
- N & P Channel Pair Thermally Enhanced MOSFETs
- Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Tradename: | TrenchFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Part # Aliases: | SI5515CDC-E3 |
Series: | SI54 |
Packaging: | Reel |
Transistor Polarity: | N-Channel, P-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Channel Mode: | Enhancement |
Configuration: | Dual |
Package / Case: | ChipFET-8 |
Rise Time: | 9 ns, 32 ns |
Vgs - Gate-Source Voltage: | 8 V |
Typical Turn-On Delay Time: | 7 ns, 10 ns |
Vgs th - Gate-Source Threshold Voltage: | 400 mV |
Id - Continuous Drain Current: | 4 A |
Rds On - Drain-Source Resistance: | 36 mOhms, 100 mOhms |
Factory Pack Quantity: | 3000 |
Typical Turn-Off Delay Time: | 30 ns, 25 ns |
Pd - Power Dissipation: | 3.1 W |
Forward Transconductance - Min: | 22.4 S, 9.5 S |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Number of Channels: | 2 Channel |
Qg - Gate Charge: | 11.3 nC, 11 nC |
Fall Time: | 10 ns, 6 ns |
Transistor Type: | 1 N-Channel, 1 P-Channel |
Unit Weight: | 0.002998 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SI5515CDC-T1-E3 Price & Stock
Vishay SI5515CDC-T1-E3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SI5515CDC-T1-E3CT-ND | 2,925 | 5.64 | 4.98 | 3.39 | 2.41 | 2.41 | 2020-03-03T14:11:33Z |
Digi-Key | SI5515CDC-T1-E3DKR-ND | 2,925 | 5.64 | 4.98 | 3.39 | 2.41 | 2.41 | 2020-03-03T14:11:33Z |
Digi-Key | SI5515CDC-T1-E3TR-ND | - | - | - | - | - | 1.98 | 2020-03-03T14:11:33Z |
Future Electronics | SI5515CDC-T1-E3 | 2,978 | 5.55 | 5.55 | 5.55 | 3.19 | 3.03 | 2020-03-04T00:23:16Z |
Mouser | 781-SI5515CDC-E3 | 19,735 | 5.64 | 4.70 | 3.62 | 2.38 | 2.12 | 2020-03-03T00:15:16Z |
Verical | SI5515CDC-T1-E3 | 6,000 | - | - | - | - | 1.79 | 2020-03-03T17:49:23Z |
Arrow Electronics | SI5515CDC-T1-E3 | 6,000 | - | - | - | - | 1.95 | 2020-03-03T17:32:53Z |
Avnet | SI5515CDC-T1-E3 | - | - | - | - | - | 2.07 | 2020-03-04T03:47:28Z |
TTI | SI5515CDC-T1-E3 | - | - | - | - | - | - | 2020-03-04T07:28:08Z |
Newark | 16P3787 | - | - | - | - | - | 2.40 | 2020-03-04T03:58:46Z |
Avnet Europe | SI5515CDC-T1-E3 | 12,000 | - | - | - | - | 2.74 | 2020-03-04T08:31:06Z |
NAC Semi | XSKDRABV0047712 | 9,000 | - | - | - | - | 2.19 | 2020-03-02T19:47:21Z |
NAC Semi | XSFP00000090676 | 7,608 | - | - | - | - | 2.51 | 2020-03-02T19:47:21Z |
Ameya360 | SI5515CDC-T1-E3 | - | - | - | - | - | 2.45 | 2020-02-28T06:24:20Z |
LTL Group | 4284057 | 3,877 | - | - | - | - | - | 2020-03-04T05:52:29Z |
Select Technology | SI5515CDC-T1-E3 | 5,757 | - | - | - | - | - | 2019-07-02T15:50:49Z |
SPEC | SI5515CDC-T1-E3 | 230 | - | - | - | - | - | 2020-02-26T16:02:45Z |
Bison Technologies | SI5515CDC-T1-E3-260946-VISHAY | 304 | - | - | - | - | - | 2020-02-28T12:09:47Z |
Dana Microsystems | SI5515CDC-T1-E3 | 752 | - | - | - | - | - | 2020-02-26T04:50:47Z |
Classic Components | SI5515CDC-T1-E3 | 177 | - | - | - | - | - | 2020-02-28T00:54:13Z |
North Star Micro | SI5515CDC-T1-E3 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
AD5242BRUZ1M distributor
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- Si5515CDC-T1-E3 - Vishay
- Mar 8, 2010 — Ordering Information: Si5515CDC-T1-E3 (Lead (Pb)-free). Si5515CDC-T1-GE3 (Lead (Pb)-free and Halogen-free). N-Channel MOSFET. D1.
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- Part Number, SI5515CDC-T1-E3. PNEDA Part #, SI5515CDC-T1-E3. Manufacturer, Vishay Siliconix. Description, MOSFET N/P-CH 20V 4A 1206-8. Unit Price.
Alternate Names
Vishay has several brands around the world that may have alternate names for SI5515CDC-T1-E3 due to regional differences or acquisition. SI5515CDC-T1-E3 may also be known as the following names:
- VIS SI5515CDC-T1-E3
- VISH SI5515CDC-T1-E3
- VISHAY INTERTECHNOLOGY INC SI5515CDC-T1-E3
- VISHA SI5515CDC-T1-E3
- VISHAY THIN FILM SI5515CDC-T1-E3
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- VISAHY SI5515CDC-T1-E3
- VISH/IR SI5515CDC-T1-E3
- VSHY SI5515CDC-T1-E3
- VSH SI5515CDC-T1-E3
- VISHAY INTERTECHNOLOGY ASIA PTE LTD SI5515CDC-T1-E3
- VISHAY ELECTRONIC SI5515CDC-T1-E3
- VSHAY SI5515CDC-T1-E3
- VISHAY FOIL RESISTORS SI5515CDC-T1-E3
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- VISHAY FOIL RESISTORS / VPG SI5515CDC-T1-E3
- VISHAY OPTO SI5515CDC-T1-E3
- Vishay Intertechnology Inc. SI5515CDC-T1-E3