Mfr. #:
QPD1008L
Description:
RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
Lifecycle:
New from this manufacturer.
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QPD1008L Information

QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Specifications

Moisture Sensitive: Yes
RoHS: Y
Packaging: Tray
Subcategory: Transistors
Configuration: Single
Mounting Style: Screw Mount
Product Category: RF JFET Transistors
Product Type: RF JFET Transistors
Brand: Qorvo
Manufacturer: Qorvo
Development Kit: QPD1008LPCB401
Series: QPD
Package / Case: NI-360
Transistor Polarity: N-Channel
Transistor Type: HEMT
Technology: GaN SiC
Vds - Drain-Source Breakdown Voltage: 50 V
Id - Continuous Drain Current: 4 A
Operating Frequency: 3.2 GHz
Factory Pack Quantity: 25
Gain: 17.5 dB
Output Power: 162 W
Vgs - Gate-Source Breakdown Voltage: 145 V
Pd - Power Dissipation: 127 W
Operating Temperature Range: - 40 C to + 85 C
Minimum Operating Temperature: - 40 C
Vgs th - Gate-Source Threshold Voltage: - 2.8 V
Maximum Operating Temperature: + 85 C

QPD1008L Price & Stock

Qorvo QPD1008L pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
RFMWQPD1008L-1412.501412.501059.38911.06911.062020-05-04T08:24:14Z
Mouser772-QPD1008L-1412.501412.501221.811221.811221.812020-05-04T16:29:54Z

AD5242BRUZ1M distributor

QPD1008L - Qorvo
Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is ...
QPD1008L Datasheet - Qorvo
QPD1008L. 125W, 50V, DC – 3.2 GHz, GaN RF Transistor. Data Sheet Rev. G, May 2020 | Subject to change without notice. 1 of 20 www.qorvo.com. Product ...
QPD1008L Qorvo | Mouser
QPD1008L Qorvo RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN datasheet, inventory, & pricing.
QPD1008L - Mouser Electronics
The QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to. 3.2 GHz with a 50V supply rail. The device is in ...
QPD1008L Qorvo RF Power Transistor|RFMW
The QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz with a 50V supply rail. The device is in ...
QPD1008L RFMD | Discrete Semiconductor Products | DigiKey
Order today, ships today. QPD1008L – RF Mosfet from RFMD. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
QPD1008L - Richardson Electronics
QPD1008L. Qorvo. GaN RF Power Transistor. $210.00. 0 In stock. Qty. Add to Cart. Add to Quote. Add to Compare. Skip to the end of the images gallery.
QPD1008L Price & Stock | DigiPart
QPD1008L Price, QPD1008L Stock, Buy QPD1008L from electronic ... QPD1008L, Qorvo, RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN, 189 ...
QPD1008L datasheet - Qorvo QPD GaN RF Transistors can be used ...
QPD1008L Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency ...
QPD1008L Qorvo - Distributors and Price Comparison | Octopart ...
Descriptions. Descriptions of Qorvo QPD1008L provided by its distributors. RF Transistor, DC - 3.2 GHz, 125 W, 50 V, GaN, Eared NI-360. RFMW.

Alternate Names

Qorvo has several brands around the world that may have alternate names for QPD1008L due to regional differences or acquisition. QPD1008L may also be known as the following names:

  • QORVO INC QPD1008L
  • Qorvo / TriQuint Semiconductor QPD1008L