- Mfr. #:
- STGB5H60DF
- Description:
- IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
STGB5H60DF Information
- IGBT H Series
- STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Specifications
RoHS: | Y |
---|---|
Configuration: | Single |
Technology: | Si |
Manufacturer: | STMicroelectronics |
Brand: | STMicroelectronics |
Series: | STGB5H60DF |
Mounting Style: | SMD/SMT |
Packaging: | Reel |
Subcategory: | IGBTs |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Package / Case: | D2PAK-3 |
Pd - Power Dissipation: | 88 W |
Collector- Emitter Voltage VCEO Max: | 600 V |
Continuous Collector Current: | 5 A |
Maximum Gate Emitter Voltage: | 20 V |
Factory Pack Quantity: | 1000 |
Continuous Collector Current at 25 C: | 10 A |
Continuous Collector Current Ic Max: | 10 A |
Collector-Emitter Saturation Voltage: | 1.5 V |
Minimum Operating Temperature: | - 55 C |
Gate-Emitter Leakage Current: | +/- 250 nA |
Maximum Operating Temperature: | + 175 C |
STGB5H60DF Price & Stock
STMicroelectronics STGB5H60DF pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | 497-16478-1-ND | 1,888 | 8.78 | 7.88 | 5.61 | 4.75 | 4.75 | 2020-02-21T17:09:39Z |
Digi-Key | 497-16478-6-ND | 1,888 | 8.78 | 7.88 | 5.61 | 4.75 | 4.75 | 2020-02-21T17:09:39Z |
Digi-Key | 497-16478-2-ND | 1,000 | - | - | - | 3.76 | 3.22 | 2020-02-21T17:09:39Z |
Mouser | 511-STGB5H60DF | 1,627 | 8.15 | 7.03 | 5.57 | 3.89 | 3.44 | 2020-02-21T22:48:47Z |
Verical | STGB5H60DF | 1,980 | - | - | 4.96 | 3.64 | 3.33 | 2020-02-22T17:51:39Z |
Verical | STGB5H60DF | 50 | - | - | 10.78 | 10.78 | 10.78 | 2020-02-22T17:51:39Z |
Arrow Electronics | STGB5H60DF | 1,980 | 7.59 | 6.67 | 4.96 | 3.64 | 3.33 | 2020-02-22T16:01:29Z |
Newark | 84Y8603 | - | - | - | - | - | 3.25 | 2020-02-22T03:49:50Z |
Avnet Europe | STGB5H60DF | - | - | - | - | 6.41 | 4.42 | 2020-02-23T08:09:23Z |
Chip One Stop Japan | C1S730201027525 | 50 | 9.24 | 9.24 | 9.21 | 9.21 | 9.21 | 2020-02-23T11:28:03Z |
LTL Group | 4509768 | 3,804 | - | - | - | - | - | 2020-02-19T03:29:56Z |
Sierra IC | STGB5H60DF | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
AD5242BRUZ1M distributor
- Datasheet - STGB5H60DF, STGD5H60DF, STGF5H60DF ...
- Mar 5, 2020 — VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link. STGB5H60DF.
- STGB5H60DF - Trench gate field-stop IGBT, H series 600 V, 5 ...
- Description. These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, ...
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- STGB5H60DF IGBT Datasheet pdf - IGBT. Equivalent, Catalog
- STMicroelectronics STGB5H60DF | IGBT. STGB5H60DF, STGD5H60DF STGF5H60DF, STGP5H60DF Datasheet Trench gate field-stop 600 V, 5 A high speed.
- STGB5H60DF Datasheet | STMicroelectronics ...
- STGB5H60DF; STGB5H60DF, STGD5H60DF STGF5H60DF, STGP5 H60DF Datasheet Trench gate field-stop 600 V, 5 A high speed H series IGBT TA B 3 1 D2 ...
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- Detailed Description IGBT Trench Field Stop 600V 10A 88W Surface Mount D2PAK · To learn about the specification of STGB5H60DF, please search the datasheet ...
Alternate Names
STMicroelectronics has several brands around the world that may have alternate names for STGB5H60DF due to regional differences or acquisition. STGB5H60DF may also be known as the following names:
- ST MICRO STGB5H60DF
- STM STGB5H60DF
- SGS STGB5H60DF
- SGS THOMSON STGB5H60DF
- INMOS STGB5H60DF
- SGS THOMPSON STGB5H60DF
- STMICROE STGB5H60DF
- STMICR STGB5H60DF
- SESCOSEM STGB5H60DF
- ST8 STGB5H60DF
- ST MIC STGB5H60DF
- WAFERSCALE STGB5H60DF
- SGS-ATES STGB5H60DF
- STMICROELECTRON STGB5H60DF
- ST MICROELECTRONICS SEMI STGB5H60DF
- ST/SGS STGB5H60DF
- SGST STGB5H60DF
- THOMS STGB5H60DF
- STMICROELECT STGB5H60DF
- WAFERSCALE INTEGRATION INC STGB5H60DF
- STMICROEL STGB5H60DF
- SGS-Thomson Microelectronics STGB5H60DF
- ST MICROELECTRO STGB5H60DF
- SGS THOMP STGB5H60DF
- SGS/ST STGB5H60DF
- ST Microeletronics STGB5H60DF