CSD87312Q3E - Texas Instruments

Mfr. #:
CSD87312Q3E
Description:
MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
Lifecycle:
New from this manufacturer.
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CSD87312Q3E Information

NexFET N-Channel Power MOSFETs
Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. Texas Instruments NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Specifications

Package / Case: VSON-8
Manufacturer: Texas Instruments
Brand: Texas Instruments
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Tradename: NexFET
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
RoHS: E
Configuration: Dual
Series: CSD87312Q3E
Vgs th - Gate-Source Threshold Voltage: 800 mV
Vgs - Gate-Source Voltage: 8 V
Typical Turn-On Delay Time: 7.8 ns
Qg - Gate Charge: 6.3 nC
Forward Transconductance - Min: 39 S
Rds On - Drain-Source Resistance: 33 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Length: 3.3 mm
Width: 3.3 mm
Id - Continuous Drain Current: 27 A
Factory Pack Quantity: 2500
Fall Time: 2.9 ns
Pd - Power Dissipation: 2.5 W
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Typical Turn-Off Delay Time: 17 ns
Rise Time: 16 ns
Height: 1 mm
Unit Weight: 0.001101 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

CSD87312Q3E Price & Stock

Texas Instruments CSD87312Q3E pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3296-35526-1-ND2,5038.227.335.223.603.602019-12-01T14:02:27Z
Digi-Key296-35526-6-ND2,5038.227.335.223.603.602019-12-01T14:02:27Z
Digi-Key296-35526-2-ND2,500----3.132019-12-01T14:02:27Z
Rochester ElectronicsCSD87312Q3E7,5603.993.993.523.213.212019-11-30T10:01:15Z
Texas InstrumentsCSD87312Q3E7,3127.206.425.092.742.742019-11-30T02:03:07Z
Mouser595-CSD87312Q3E3,2697.916.735.193.623.092019-12-01T09:47:27Z
VericalCSD87312Q3E10,000----3.172019-12-01T17:57:44Z
AvnetCSD87312Q3E-----3.312019-11-30T01:24:20Z
Avnet EuropeCSD87312Q3E-----5.282019-12-02T07:20:30Z
SourceabilityCSD87312Q3E2,500-----2019-11-26T18:50:02Z
LTL Group3934006194-----2019-12-02T05:01:09Z
Component ElectronicsCSD87312Q3E758.438.438.438.438.432019-11-26T21:24:43Z
GreenTree ElectronicsCSD87312Q3E10,000-----2019-11-06T14:43:13Z
Au LingCSD87312Q3EContact-----2019-11-27T14:34:02Z
NexxonCSD87312Q3EContact-----2018-02-27T00:44:39Z
North Star MicroCSD87312Q3EContact-----2015-05-20T05:52:12Z
Sierra ICCSD87312Q3EContact-----2019-09-03T21:05:22Z
SemiconductorPLUSCSD87312Q3EContact-----2016-12-28T19:16:53Z

AD5242BRUZ1M distributor

Dual 30-V N-Channel NexFet Power MOSFET ...
+10/-8. V. DESCRIPTION. ID. Continuous Drain Current, TC = 25°C(1). 27. A. The CSD87312Q3E is a 30V common-source, dual. IDM. Pulsed Drain Current (2).
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Alternate Names

Texas Instruments has several brands around the world that may have alternate names for CSD87312Q3E due to regional differences or acquisition. CSD87312Q3E may also be known as the following names:

  • TI CSD87312Q3E
  • TEXAS CSD87312Q3E
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  • TEXASIN CSD87312Q3E
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  • TEAXS CSD87312Q3E
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  • Texas Instruments Rfid Systems CSD87312Q3E
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  • TEXAS INSRUMENTS CSD87312Q3E
  • Texas Instr. CSD87312Q3E
  • Texas Instruments Inc. CSD87312Q3E