- Mfr. #:
- SIHB24N65ET1-GE3
- Description:
- MOSFET N-Channel 650V
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIHB24N65ET1-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- E Series High Voltage MOSFETs
- Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Vishay / Siliconix |
| Manufacturer: | Vishay |
| Package / Case: | TO-263-3 |
| Configuration: | Single |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Channel Mode: | Enhancement |
| Series: | E |
| Width: | 9.65 mm |
| Rise Time: | 84 ns |
| Qg - Gate Charge: | 81 nC |
| Factory Pack Quantity: | 800 |
| Vds - Drain-Source Breakdown Voltage: | 700 V |
| Typical Turn-Off Delay Time: | 70 ns |
| Fall Time: | 69 ns |
| Height: | 4.83 mm |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Vgs - Gate-Source Voltage: | 30 V |
| Pd - Power Dissipation: | 250 W |
| Typical Turn-On Delay Time: | 24 ns |
| Id - Continuous Drain Current: | 24 A |
| Rds On - Drain-Source Resistance: | 145 mOhms |
| Length: | 10.67 mm |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.077603 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
SIHB24N65ET1-GE3 Price & Stock
Vishay SIHB24N65ET1-GE3 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | SIHB24N65ET1-GE3-ND | - | - | - | - | 23.69 | 23.69 | 2020-03-10T13:09:02Z |
| Avnet | SIHB24N65ET1-GE3 | - | - | - | - | 21.55 | 18.98 | 2020-03-11T02:46:44Z |
| Classic Components | SIHB24N65ET1-GE3 | 8,008 | - | - | - | - | - | 2020-03-09T23:37:47Z |
AD5242BRUZ1M distributor
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Alternate Names
Vishay has several brands around the world that may have alternate names for SIHB24N65ET1-GE3 due to regional differences or acquisition. SIHB24N65ET1-GE3 may also be known as the following names:
- VIS SIHB24N65ET1-GE3
- VISH SIHB24N65ET1-GE3
- VISHAY INTERTECHNOLOGY INC SIHB24N65ET1-GE3
- VISHA SIHB24N65ET1-GE3
- VISHAY THIN FILM SIHB24N65ET1-GE3
- VISHAY INTERTECHNOLOGY SIHB24N65ET1-GE3
- VISHY SIHB24N65ET1-GE3
- VISAHY SIHB24N65ET1-GE3
- VISH/IR SIHB24N65ET1-GE3
- VSHY SIHB24N65ET1-GE3
- VSH SIHB24N65ET1-GE3
- VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHB24N65ET1-GE3
- VISHAY ELECTRONIC SIHB24N65ET1-GE3
- VSHAY SIHB24N65ET1-GE3
- VISHAY FOIL RESISTORS SIHB24N65ET1-GE3
- VISHAY AMERICAS INC SIHB24N65ET1-GE3
- VISHAY INTERTECHNOLOGY ASIA PT SIHB24N65ET1-GE3
- VISHAY AMERICAS SIHB24N65ET1-GE3
- VISHAY ELECTRO-FILMS SIHB24N65ET1-GE3
- VISHAY COMPONENTS SIHB24N65ET1-GE3
- Vishay Semiconductors SIHB24N65ET1-GE3
- VISHAY COMPONENTS NEDERLAND SIHB24N65ET1-GE3
- VISHAY INTERTEC SIHB24N65ET1-GE3
- VISHAY FOIL RESISTORS / VPG SIHB24N65ET1-GE3
- VISHAY OPTO SIHB24N65ET1-GE3
- Vishay Intertechnology Inc. SIHB24N65ET1-GE3