- Mfr. #:
- SIHD7N60ET4-GE3
- Description:
- MOSFET 600V Vds E Series DPAK TO-252
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIHD7N60ET4-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- E Series High Voltage MOSFETs
- Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Package / Case: | TO-252-3 |
Configuration: | Single |
Technology: | Si |
Mounting Style: | SMD/SMT |
Packaging: | Reel |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Transistor Type: | MOSFET |
Product Type: | MOSFET |
Channel Mode: | Enhancement |
Series: | E |
Pd - Power Dissipation: | 78 W |
Id - Continuous Drain Current: | 7 A |
Vds - Drain-Source Breakdown Voltage: | 609 V |
Rds On - Drain-Source Resistance: | 600 mOhms |
Qg - Gate Charge: | 40 nC |
Factory Pack Quantity: | 3000 |
Vgs - Gate-Source Voltage: | 30 V |
Typical Turn-Off Delay Time: | 24 ns |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Typical Turn-On Delay Time: | 13 ns |
Number of Channels: | 1 Channel |
Unit Weight: | 0.011993 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SIHD7N60ET4-GE3 Price & Stock
Vishay SIHD7N60ET4-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Mouser | 78-SIHD7N60ET4-GE3 | 3,000 | 13.74 | 11.41 | 8.85 | 6.70 | 5.82 | 2020-02-11T00:53:36Z |
Digi-Key | SIHD7N60ET4-GE3-ND | - | - | - | - | - | 6.11 | 2020-02-07T15:59:58Z |
Avnet | SIHD7N60ET4-GE3 | - | - | - | - | - | 6.25 | 2020-02-08T03:44:22Z |
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Alternate Names
Vishay has several brands around the world that may have alternate names for SIHD7N60ET4-GE3 due to regional differences or acquisition. SIHD7N60ET4-GE3 may also be known as the following names:
- VIS SIHD7N60ET4-GE3
- VISH SIHD7N60ET4-GE3
- VISHAY INTERTECHNOLOGY INC SIHD7N60ET4-GE3
- VISHA SIHD7N60ET4-GE3
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHD7N60ET4-GE3
- VISHAY ELECTRONIC SIHD7N60ET4-GE3
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- VISHAY FOIL RESISTORS SIHD7N60ET4-GE3
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- VISHAY FOIL RESISTORS / VPG SIHD7N60ET4-GE3
- VISHAY OPTO SIHD7N60ET4-GE3
- Vishay Intertechnology Inc. SIHD7N60ET4-GE3