SIHD7N60ET4-GE3 - Vishay / Siliconix

Mfr. #:
SIHD7N60ET4-GE3
Description:
MOSFET 600V Vds E Series DPAK TO-252
Lifecycle:
New from this manufacturer.
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SIHD7N60ET4-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Package / Case: TO-252-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Transistor Type: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Pd - Power Dissipation: 78 W
Id - Continuous Drain Current: 7 A
Vds - Drain-Source Breakdown Voltage: 609 V
Rds On - Drain-Source Resistance: 600 mOhms
Qg - Gate Charge: 40 nC
Factory Pack Quantity: 3000
Vgs - Gate-Source Voltage: 30 V
Typical Turn-Off Delay Time: 24 ns
Vgs th - Gate-Source Threshold Voltage: 2 V
Typical Turn-On Delay Time: 13 ns
Number of Channels: 1 Channel
Unit Weight: 0.011993 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHD7N60ET4-GE3 Price & Stock

Vishay SIHD7N60ET4-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser78-SIHD7N60ET4-GE33,00013.7411.418.856.705.822020-02-11T00:53:36Z
Digi-KeySIHD7N60ET4-GE3-ND-----6.112020-02-07T15:59:58Z
AvnetSIHD7N60ET4-GE3-----6.252020-02-08T03:44:22Z

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SIHD7N60ET4-GE3's Attributes are:Rds On - Drain-Source Resistance:600 mOhms|Pd - Power Dissipation:78 W|Product Type:MOSFET|Number of Channels:1 ...
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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHD7N60ET4-GE3 due to regional differences or acquisition. SIHD7N60ET4-GE3 may also be known as the following names:

  • VIS SIHD7N60ET4-GE3
  • VISH SIHD7N60ET4-GE3
  • VISHAY INTERTECHNOLOGY INC SIHD7N60ET4-GE3
  • VISHA SIHD7N60ET4-GE3
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  • VISAHY SIHD7N60ET4-GE3
  • VISH/IR SIHD7N60ET4-GE3
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  • VSH SIHD7N60ET4-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHD7N60ET4-GE3
  • VISHAY ELECTRONIC SIHD7N60ET4-GE3
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  • VISHAY FOIL RESISTORS / VPG SIHD7N60ET4-GE3
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  • Vishay Intertechnology Inc. SIHD7N60ET4-GE3