- Mfr. #:
- CGHV1F006S
- Description:
- RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
CGHV1F006S Information
- GaN HEMTs
- Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
- X-Band GaN HEMTs & MMICs
- Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Specifications
| Moisture Sensitive: | Yes |
|---|---|
| RoHS: | Y |
| Brand: | Wolfspeed / Cree |
| Subcategory: | Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel |
| Product Type: | RF JFET Transistors |
| Product Category: | RF JFET Transistors |
| Transistor Polarity: | N-Channel |
| Transistor Type: | HEMT |
| Technology: | GaN |
| Package / Case: | DFN-12 |
| Manufacturer: | Cree, Inc. |
| Id - Continuous Drain Current: | 950 mA |
| Output Power: | 6 W |
| Factory Pack Quantity: | 250 |
| Operating Frequency: | 18 GHz |
| Gain: | 16 dB |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Operating Temperature Range: | - 40 C to + 150 C |
| Minimum Operating Temperature: | - 40 C |
| Vgs th - Gate-Source Threshold Voltage: | - 3 V |
| Vgs - Gate-Source Breakdown Voltage: | - 10 V to 2 V |
| Rds On - Drain-Source Resistance: | - |
| P1dB - Compression Point: | - |
| Pd - Power Dissipation: | - |
| NF - Noise Figure: | - |
| Class: | - |
| Forward Transconductance - Min: | - |
| Application: | - |
| Maximum Drain Gate Voltage: | - |
| Gate-Source Cutoff Voltage: | - |
| Maximum Operating Temperature: | + 150 C |
CGHV1F006S Price & Stock
Wolfspeed CGHV1F006S pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | CGHV1F006SCT-ND | 47 | 322.81 | 322.81 | 322.81 | 322.81 | 322.81 | 2019-11-17T13:35:27Z |
| Digi-Key | CGHV1F006SDKR-ND | 47 | 322.81 | 322.81 | 322.81 | 322.81 | 322.81 | 2019-11-17T13:35:27Z |
| Digi-Key | CGHV1F006STR-ND | - | - | - | - | 321.63 | 321.63 | 2019-11-17T13:35:27Z |
| Richardson RFPD | CGHV1F006S | 213 | - | - | - | 313.76 | 313.76 | 2019-11-16T02:07:31Z |
AD5242BRUZ1M distributor
- Gallium Nitride HEMT 6W Discrete Transistor | Wolfspeed
- Wolfspeed's CGHV1F006 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain ...
- CGHV1F006S - Wolfspeed
- 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com. Large Signal Models Available for ADS and MWO. CGHV1F006S. 6 W, DC - 15 GHz, 40 V, GaN HEMT.
- CGHV1F006S Wolfspeed / Cree | Mouser
- CGHV1F006S Wolfspeed / Cree RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt datasheet, inventory, & pricing.
- CGHV1F006S Cree/Wolfspeed | Discrete Semiconductor ...
- Order today, ships today. CGHV1F006S – RF Mosfet HEMT 6GHz 16dB 8W 12-DFN (4x3) from Cree/Wolfspeed. Pricing and Availability on millions of electronic ...
- CGHV1F006S-AMP1 Cree/Wolfspeed | RF/IF and RFID ...
- Order today, ships today. CGHV1F006S-AMP1 – CGHV1F006 series pval(183) Evaluation Board from Cree/Wolfspeed. Pricing and Availability on millions of ...
- CGHV1F006S - Wolfspeed, A Cree Company | RF Transistor
- The CGHV1F006S from Wolfspeed is an unmatched, GaN HEMT that operates from DC to 15 GHz. The device can be deployed for L, S, C, X and Ku-band ...
- CGHV1F006S-AMP2 Wolfspeed, A Cree Company
- CGHV1F006S-AMP2 Wolfspeed, A Cree Company RF Transistor Test Fixture Pricing And Availability.
- CGHV1F006S-AMP3 Wolfspeed / Cree | Mouser United ...
- CGHV1F006S-AMP3 Wolfspeed / Cree RF Development Tools Test Board with GaN HEMT datasheet, inventory & pricing.
- CGHV1F006S by Wolfspeed | RF MOSFETs | Arrow.com
- Buy CGHV1F006S with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other RF MOSFETs.
- CGHV1F006S HEMT Datasheet pdf - GaN HEMT. Equivalent ...
- Cree CGHV1F006S | HEMT. CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Cree's CGHV1F006S is an unmatched, gallium nitride (GaN) .
Alternate Names
Wolfspeed has several brands around the world that may have alternate names for CGHV1F006S due to regional differences or acquisition. CGHV1F006S may also be known as the following names: