NTGS1135PT1G - ON Semiconductor

Mfr. #:
NTGS1135PT1G
Description:
MOSFET 8V Power Mosfet P-Channel
Lifecycle:
New from this manufacturer.
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NTGS1135PT1G Information

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Specifications

RoHS: Y
Package / Case: TSOP-6
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Type: Power MOSFET
Transistor Polarity: P-Channel
Brand: ON Semiconductor
Manufacturer: ON Semiconductor
Subcategory: MOSFETs
Product: MOSFET Small Signal
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Vds - Drain-Source Breakdown Voltage: 8 V
Vgs - Gate-Source Voltage: 6 V
Id - Continuous Drain Current: 5.8 A
Factory Pack Quantity: 3000
Fall Time: 3.9 ns
Length: 3 mm
Rise Time: 16 ns
Typical Turn-Off Delay Time: 128 ns
Rds On - Drain-Source Resistance: 100 mOhms
Typical Turn-On Delay Time: 10 ns
Pd - Power Dissipation: 1.6 W
Width: 1.5 mm
Forward Transconductance - Min: 1.2 S
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Height: 0.94 mm
Unit Weight: 0.000705 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

NTGS1135PT1G Price & Stock

ON Semiconductor NTGS1135PT1G pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Rochester ElectronicsNTGS1135PT1G17,3802.312.312.031.891.892019-12-21T10:03:15Z
LTL Group4171257596-----2019-12-20T06:32:56Z
QuestNTGS1135PT1G2727.716.173.852.312.312019-12-21T11:30:21Z
Classic ComponentsNTGS1135PT1G262-----2019-12-18T00:47:00Z
North Star MicroNTGS1135PT1GContact-----2015-05-20T05:52:12Z
Sierra ICNTGS1135PT1GContact-----2019-12-16T00:48:56Z

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Alternate Names

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