Mfr. #:
QPD1000
Description:
RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
Lifecycle:
New from this manufacturer.
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QPD1000 Information

QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Specifications

Moisture Sensitive: Yes
RoHS: Y
Packaging: Tray
Subcategory: Transistors
Configuration: Single
Mounting Style: SMD/SMT
Product Category: RF JFET Transistors
Product Type: RF JFET Transistors
Brand: Qorvo
Manufacturer: Qorvo
Development Kit: QPD1000PCB401, QPD1000PCB402
Series: QPD
Package / Case: QFN-8
Transistor Polarity: N-Channel
Transistor Type: HEMT
Technology: GaN SiC
Id - Continuous Drain Current: 817 mA
Operating Frequency: 30 MHz to 1.215 GHz
Pd - Power Dissipation: 28.8 W
Vds - Drain-Source Breakdown Voltage: 28 V
Output Power: 24 W
Gain: 19 dB
Part # Aliases: 1131140
Vgs - Gate-Source Breakdown Voltage: 100 V
Factory Pack Quantity: 100
Operating Temperature Range: - 40 C to + 85 C
Minimum Operating Temperature: - 40 C
Vgs th - Gate-Source Threshold Voltage: - 2.8 V
Maximum Operating Temperature: + 85 C

QPD1000 Price & Stock

Qorvo QPD1000 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser772-QPD100089408.28408.28316.77316.77316.772019-12-06T22:54:47Z
RFMWQPD1000226408.28408.28316.77267.49267.492019-12-09T08:20:32Z
Hermes EngineeringQPD100069-----2019-12-02T08:53:07Z

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Alternate Names

Qorvo has several brands around the world that may have alternate names for QPD1000 due to regional differences or acquisition. QPD1000 may also be known as the following names:

  • QORVO INC QPD1000
  • Qorvo / TriQuint Semiconductor QPD1000