Mfr. #:
QPD1015L
Description:
RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
Lifecycle:
New from this manufacturer.
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QPD1015L Information

QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Specifications

RoHS: Y
Packaging: Tray
Subcategory: Transistors
Configuration: Single
Mounting Style: Screw Mount
Product Type: RF JFET Transistors
Product Category: RF JFET Transistors
Manufacturer: Qorvo
Brand: Qorvo
Development Kit: QPD1015LPCB401
Series: QPD
Package / Case: NI-360
Transistor Polarity: N-Channel
Transistor Type: HEMT
Technology: GaN SiC
Output Power: 70 W
Pd - Power Dissipation: 64 W
Vds - Drain-Source Breakdown Voltage: 50 V
Operating Frequency: 3.7 GHz
Factory Pack Quantity: 25
Gain: 20 dB
Id - Continuous Drain Current: 2.5 A
Vgs - Gate-Source Breakdown Voltage: 145 V
Operating Temperature Range: - 40 C to + 85 C
Minimum Operating Temperature: - 40 C
Vgs th - Gate-Source Threshold Voltage: - 2.8 V
Maximum Operating Temperature: + 85 C

QPD1015L Price & Stock

Qorvo QPD1015L pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser772-QPD1015L4944.43944.43706.58657.61657.612019-11-05T13:36:17Z
RFMWQPD1015L27944.43944.43706.58608.63608.632019-11-09T10:44:24Z

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Alternate Names

Qorvo has several brands around the world that may have alternate names for QPD1015L due to regional differences or acquisition. QPD1015L may also be known as the following names:

  • QORVO INC QPD1015L
  • Qorvo / TriQuint Semiconductor QPD1015L