SIHD9N60E-GE3 - Vishay / Siliconix

Mfr. #:
SIHD9N60E-GE3
Description:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Lifecycle:
New from this manufacturer.
Delivery
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SIHD9N60E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Package / Case: TO-252-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Id - Continuous Drain Current: 9 A
Pd - Power Dissipation: 78 W
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Rds On - Drain-Source Resistance: 320 mOhms
Typical Turn-Off Delay Time: 31 ns
Factory Pack Quantity: 3000
Vgs - Gate-Source Voltage: 30 V
Qg - Gate Charge: 26 nC
Typical Turn-On Delay Time: 14 ns
Rise Time: 13 ns
Fall Time: 12 ns
Number of Channels: 1 Channel
Unit Weight: 0.011993 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHD9N60E-GE3 Price & Stock

Vishay SIHD9N60E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHD9N60E-GE3-ND2,99012.8911.568.506.105.582020-03-06T13:55:45Z
Mouser78-SIHD9N60E-GE33,01312.8910.888.876.905.892020-03-04T23:40:23Z
element14 APAC27476962,90113.6111.499.377.287.282020-03-06T02:20:26Z
AvnetSIHD9N60E-GE3-----6.162020-03-06T02:02:02Z
Farnell27476962,91513.3910.228.125.425.422020-03-06T02:52:08Z
Newark20AC3808-----5.712020-03-06T03:49:04Z
Avnet EuropeSIHD9N60E-GE3-8.958.236.896.896.892020-03-06T09:02:31Z
LTL Group4285272------2020-03-06T07:59:49Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHD9N60E-GE3 due to regional differences or acquisition. SIHD9N60E-GE3 may also be known as the following names:

  • VIS SIHD9N60E-GE3
  • VISH SIHD9N60E-GE3
  • VISHAY INTERTECHNOLOGY INC SIHD9N60E-GE3
  • VISHA SIHD9N60E-GE3
  • VISHAY THIN FILM SIHD9N60E-GE3
  • VISHAY INTERTECHNOLOGY SIHD9N60E-GE3
  • VISHY SIHD9N60E-GE3
  • VISAHY SIHD9N60E-GE3
  • VISH/IR SIHD9N60E-GE3
  • VSHY SIHD9N60E-GE3
  • VSH SIHD9N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHD9N60E-GE3
  • VISHAY ELECTRONIC SIHD9N60E-GE3
  • VSHAY SIHD9N60E-GE3
  • VISHAY FOIL RESISTORS SIHD9N60E-GE3
  • VISHAY AMERICAS INC SIHD9N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHD9N60E-GE3
  • VISHAY AMERICAS SIHD9N60E-GE3
  • VISHAY ELECTRO-FILMS SIHD9N60E-GE3
  • VISHAY COMPONENTS SIHD9N60E-GE3
  • Vishay Semiconductors SIHD9N60E-GE3
  • VISHAY COMPONENTS NEDERLAND SIHD9N60E-GE3
  • VISHAY INTERTEC SIHD9N60E-GE3
  • VISHAY FOIL RESISTORS / VPG SIHD9N60E-GE3
  • VISHAY OPTO SIHD9N60E-GE3
  • Vishay Intertechnology Inc. SIHD9N60E-GE3