IPDD60R050G7XTMA1 - Infineon Technologies

Mfr. #:
IPDD60R050G7XTMA1
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
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IPDD60R050G7XTMA1 Information

CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.

Specifications

RoHS: Y
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Package / Case: PG-HDSOP-10
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPDD60R050G7 SP001632818
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 72 ns
Qg - Gate Charge: 68 nC
Vds - Drain-Source Breakdown Voltage: 600 V
Rise Time: 6 ns
Rds On - Drain-Source Resistance: 50 mOhms
Id - Continuous Drain Current: 47 A
Fall Time: 3 ns
Vgs th - Gate-Source Threshold Voltage: 3 V
Pd - Power Dissipation: 278 W
Typical Turn-On Delay Time: 22 ns
Vgs - Gate-Source Voltage: 20 V
Factory Pack Quantity: 1700
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IPDD60R050G7XTMA1 Price & Stock

Infineon IPDD60R050G7XTMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3IPDD60R050G7XTMA1CT-ND1,27473.8366.6952.7346.5346.532019-12-02T13:47:43Z
Digi-KeyIPDD60R050G7XTMA1DKR-ND1,27473.8366.6952.7346.5346.532019-12-02T13:47:43Z
Digi-KeyIPDD60R050G7XTMA1TR-ND-----40.652019-12-02T13:47:43Z
Future ElectronicsIPDD60R050G7XTMA11592.2292.2269.2159.9759.972019-12-03T01:54:06Z
Mouser726-IPDD60R050G7XTM11,33271.6364.7453.5546.6646.662019-12-02T23:58:26Z
element14 APAC28884611,04579.9072.2259.7345.3243.662019-12-03T02:27:01Z
Chip One Stop JapanC1S3220007189222075.8458.6558.6558.6558.652019-12-02T12:11:28Z
Arrow ElectronicsIPDD60R050G7XTMA11,46067.4361.5750.2639.5838.412019-11-23T18:37:13Z
Verical 2IPDD60R050G7XTMA11,456-61.5750.2639.5838.412019-12-02T17:55:35Z
VericalIPDD60R050G7XTMA120-67.0867.0867.0867.082019-12-02T17:55:35Z
AvnetIPDD60R050G7XTMA1-----40.312019-12-03T01:21:47Z
Farnell 228884611,04683.6966.7157.8643.9343.932019-12-02T15:06:39Z
Farnell2888461RL----43.9343.932019-12-02T15:06:39Z
Newark59AC70391,04571.6364.7453.5540.6340.632019-12-03T03:06:52Z
RutronikTMOS2438-----38.412019-11-28T03:19:59Z
Avnet EuropeSP0016328181,700----45.732019-12-03T07:37:04Z
NAC SemiXSKDRABS00481375,100----49.712019-11-26T22:44:33Z
SourceabilityIPDD60R050G7XTMA115-----2019-11-26T18:50:02Z
Classic ComponentsIPDD60R050G7XTMA12,618-----2019-11-12T23:57:55Z
GreenTree ElectronicsIPDD60R050G7XTMA11,700-----2019-11-06T14:43:13Z
TMEIPDD60R050G7XTMA1-72.8565.5652.0352.0352.032019-12-01T12:14:00Z
Abacus TechnologiesIPDD60R050G76,098-----2019-12-03T00:14:38Z
Sierra ICIPDD60R050G7XTMA1Contact-----2019-09-03T21:05:22Z

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MOSFET HIGH POWER_NEW Pack of 10 ... - Amazon.com
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