PTFA211801F V4 R250 - Infineon Technologies

Mfr. #:
PTFA211801F V4 R250
Description:
RF MOSFET Transistors Hi Pwr RF LDMOS FET 180 W 2110-2170 MHz
Lifecycle:
New from this manufacturer.
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PTFA211801F V4 R250 Information

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Specifications

RoHS: Y
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Type: RF Power MOSFET
Product Type: RF MOSFET Transistors
Product Category: RF MOSFET Transistors
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Brand: Infineon Technologies
Manufacturer: Infineon
Package / Case: H-34288-4/2
Part # Aliases: FA211801FV4R25XT
Channel Mode: Enhancement
Vds - Drain-Source Breakdown Voltage: 65 V
Pd - Power Dissipation: 56.5 W
Rds On - Drain-Source Resistance: 50 mOhms
Height: 4.11 mm
Factory Pack Quantity: 250
Length: 23.11 mm
Operating Frequency: 2170 MHz
Output Power: 180 W
Gain: 17.5 dB
Width: 13.72 mm
Vgs - Gate-Source Voltage: 10 V
Id - Continuous Drain Current: 1.3 A
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C

PTFA211801F V4 R250 Price & Stock

Infineon PTFA211801F V4 R250 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
LTL Group4236915972-----2019-11-25T02:05:31Z
North Star MicroPTFA211801F V4 R250Contact-----2015-05-20T05:52:12Z

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Alternate Names

Infineon has several brands around the world that may have alternate names for PTFA211801F V4 R250 due to regional differences or acquisition. PTFA211801F V4 R250 may also be known as the following names:

  • Infineon Technologies PTFA211801F V4 R250
  • INF PTFA211801F V4 R250
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  • INFINEON/SIEMENS PTFA211801F V4 R250
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