SIHW30N60E-GE3 - Vishay / Siliconix

Mfr. #:
SIHW30N60E-GE3
Description:
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Lifecycle:
New from this manufacturer.
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SIHW30N60E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Packaging: Bulk
Qg - Gate Charge: 85 nC
Typical Turn-Off Delay Time: 63 ns
Vds - Drain-Source Breakdown Voltage: 600 V
Width: 5.31 mm
Factory Pack Quantity: 480
Fall Time: 36 ns
Rise Time: 32 ns
Vgs - Gate-Source Voltage: 30 V
Id - Continuous Drain Current: 29 A
Pd - Power Dissipation: 250 W
Height: 20.82 mm
Vgs th - Gate-Source Threshold Voltage: 2.8 V
Typical Turn-On Delay Time: 19 ns
Length: 15.87 mm
Rds On - Drain-Source Resistance: 125 mOhms
Unit Weight: 1.340411 oz
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHW30N60E-GE3 Price & Stock

Vishay SIHW30N60E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHW30N60E-GE3-ND16142.2837.9428.6928.6928.692020-01-16T20:39:22Z
Mouser78-SIHW30N60E-GE348042.2835.8330.7022.2522.252020-01-22T23:48:26Z
TTISIHW30N60E-GE3------2020-01-23T08:18:31Z
AvnetSIHW30N60E-GE3------2020-01-23T04:53:26Z
Newark68W7076------2020-01-23T03:14:11Z
Abacus TechnologiesSIHW30N60E-GE340,656-----2019-12-06T00:07:36Z
North Star MicroSIHW30N60E-GE3Contact-----2015-05-20T05:52:12Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHW30N60E-GE3 due to regional differences or acquisition. SIHW30N60E-GE3 may also be known as the following names:

  • VIS SIHW30N60E-GE3
  • VISH SIHW30N60E-GE3
  • VISHAY INTERTECHNOLOGY INC SIHW30N60E-GE3
  • VISHA SIHW30N60E-GE3
  • VISHAY THIN FILM SIHW30N60E-GE3
  • VISHAY INTERTECHNOLOGY SIHW30N60E-GE3
  • VISHY SIHW30N60E-GE3
  • VISAHY SIHW30N60E-GE3
  • VISH/IR SIHW30N60E-GE3
  • VSHY SIHW30N60E-GE3
  • VSH SIHW30N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHW30N60E-GE3
  • VISHAY ELECTRONIC SIHW30N60E-GE3
  • VSHAY SIHW30N60E-GE3
  • VISHAY FOIL RESISTORS SIHW30N60E-GE3
  • VISHAY AMERICAS INC SIHW30N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHW30N60E-GE3
  • VISHAY AMERICAS SIHW30N60E-GE3
  • VISHAY ELECTRO-FILMS SIHW30N60E-GE3
  • VISHAY COMPONENTS SIHW30N60E-GE3
  • Vishay Semiconductors SIHW30N60E-GE3
  • VISHAY COMPONENTS NEDERLAND SIHW30N60E-GE3
  • VISHAY INTERTEC SIHW30N60E-GE3
  • VISHAY FOIL RESISTORS / VPG SIHW30N60E-GE3
  • VISHAY OPTO SIHW30N60E-GE3
  • Vishay Intertechnology Inc. SIHW30N60E-GE3