- Mfr. #:
- SI2301BDS-T1-GE3
- Description:
- MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SI2301BDS-T1-GE3 Information
- SI2 Series TrenchFET® Power MOSFETs
- Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Tradename: | TrenchFET |
Configuration: | Single |
Technology: | Si |
Package / Case: | SOT-23-3 |
Mounting Style: | SMD/SMT |
Part # Aliases: | SI2301BDS-GE3 |
Series: | SI2 |
Packaging: | Reel |
Transistor Polarity: | P-Channel |
Subcategory: | MOSFETs |
Product Type: | MOSFET |
Product Category: | MOSFET |
Channel Mode: | Enhancement |
Forward Transconductance - Min: | 6.5 S |
Vgs th - Gate-Source Threshold Voltage: | 450 mV |
Rise Time: | 40 ns |
Qg - Gate Charge: | 4.5 nC |
Vgs - Gate-Source Voltage: | 4.5 V |
Factory Pack Quantity: | 3000 |
Typical Turn-Off Delay Time: | 30 ns |
Fall Time: | 20 ns |
Typical Turn-On Delay Time: | 20 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Length: | 2.9 mm |
Id - Continuous Drain Current: | 2.2 A |
Rds On - Drain-Source Resistance: | 100 mOhms |
Width: | 1.6 mm |
Height: | 1.45 mm |
Transistor Type: | 1 P-Channel |
Number of Channels: | 1 Channel |
Pd - Power Dissipation: | 0.7 W |
Unit Weight: | 0.000282 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SI2301BDS-T1-GE3 Price & Stock
Vishay SI2301BDS-T1-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SI2301BDS-T1-GE3CT-ND | 564 | 3.46 | 2.94 | 2.04 | 1.29 | 1.29 | 2020-01-09T13:59:11Z |
Digi-Key | SI2301BDS-T1-GE3DKR-ND | 564 | 3.46 | 2.94 | 2.04 | 1.29 | 1.29 | 2020-01-09T13:59:11Z |
Digi-Key | SI2301BDS-T1-GE3TR-ND | - | - | - | - | - | 1.07 | 2020-01-09T13:59:11Z |
Mouser | 781-SI2301BDS-GE3 | 11,619 | 3.46 | 2.80 | 2.07 | 1.29 | 1.02 | 2020-01-08T18:07:50Z |
Arrow Electronics | SI2301BDS-T1-GE3 | 9,000 | - | - | - | - | 0.962 | 2020-01-09T15:59:59Z |
Arrow Electronics | SI2301BDS-T1-GE3 | 1,676 | 3.36 | 2.69 | 1.99 | 1.20 | 1.20 | 2020-01-08T18:07:50Z |
Verical | SI2301BDS-T1-GE3 | 9,000 | - | - | - | - | 0.944 | 2020-01-08T18:07:50Z |
Verical | SI2301BDS-T1-GE3 | 1,676 | - | - | 1.99 | 1.20 | 1.20 | 2020-01-08T18:07:50Z |
Avnet | SI2301BDS-T1-GE3 | - | - | - | - | - | 1.08 | 2020-01-10T03:44:14Z |
Newark | 84R8020 | - | 3.46 | 3.46 | 2.07 | 1.29 | 1.29 | 2020-01-08T18:07:50Z |
Newark | 33P5162 | - | 1.32 | 1.32 | 1.32 | 1.32 | 1.18 | 2020-01-08T18:07:50Z |
Avnet Europe | SI2301BDS-T1-GE3 | - | 1.68 | 1.51 | 1.26 | 1.26 | 1.26 | 2020-01-10T07:50:44Z |
Sourceability | SI2301BDS-T1-GE3 | 1,172 | - | - | - | - | - | 2020-01-06T21:24:21Z |
Quest | SI2301BDS-T1-GE3 | 5 | 2.77 | 2.77 | 2.77 | 2.77 | 2.77 | 2020-01-10T11:22:17Z |
Bison Technologies | SI2301BDS-T1-GE3-75354-VISHAY | 2,241 | - | - | - | - | - | 2020-01-07T08:46:28Z |
Chip 1 Exchange | SI2301BDS-T1-GE3 | 12,330 | - | - | - | - | - | 2019-11-19T09:43:30Z |
OMO Electronics | 320957 | 14,995 | - | - | - | 0.713 | 0.588 | 2020-01-06T10:29:30Z |
Dana Microsystems | SI2301BDS-T1-GE3 | 1,813 | - | - | - | - | - | 2020-01-05T04:44:34Z |
Classic Components | SI2301BDS-T1-GE3 | 9,240 | - | - | - | - | - | 2020-01-08T00:13:17Z |
Abacus Technologies | SI2301BDS-T1-GE3 | 20,328 | - | - | - | - | - | 2019-12-06T00:07:36Z |
Nexxon | SI2301BDS-T1-GE3 | Contact | - | - | - | - | - | 2018-02-27T00:44:39Z |
North Star Micro | SI2301BDS-T1-GE3 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
SemiconductorPLUS | SI2301BDS-T1-GE3 | Contact | - | - | - | - | - | 2016-12-28T19:16:53Z |
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Alternate Names
Vishay has several brands around the world that may have alternate names for SI2301BDS-T1-GE3 due to regional differences or acquisition. SI2301BDS-T1-GE3 may also be known as the following names:
- VIS SI2301BDS-T1-GE3
- VISH SI2301BDS-T1-GE3
- VISHAY INTERTECHNOLOGY INC SI2301BDS-T1-GE3
- VISHA SI2301BDS-T1-GE3
- VISHAY THIN FILM SI2301BDS-T1-GE3
- VISHAY INTERTECHNOLOGY SI2301BDS-T1-GE3
- VISHY SI2301BDS-T1-GE3
- VISAHY SI2301BDS-T1-GE3
- VISH/IR SI2301BDS-T1-GE3
- VSHY SI2301BDS-T1-GE3
- VSH SI2301BDS-T1-GE3
- VISHAY INTERTECHNOLOGY ASIA PTE LTD SI2301BDS-T1-GE3
- VISHAY ELECTRONIC SI2301BDS-T1-GE3
- VSHAY SI2301BDS-T1-GE3
- VISHAY FOIL RESISTORS SI2301BDS-T1-GE3
- VISHAY AMERICAS INC SI2301BDS-T1-GE3
- VISHAY INTERTECHNOLOGY ASIA PT SI2301BDS-T1-GE3
- VISHAY AMERICAS SI2301BDS-T1-GE3
- VISHAY ELECTRO-FILMS SI2301BDS-T1-GE3
- VISHAY COMPONENTS SI2301BDS-T1-GE3
- Vishay Semiconductors SI2301BDS-T1-GE3
- VISHAY COMPONENTS NEDERLAND SI2301BDS-T1-GE3
- VISHAY INTERTEC SI2301BDS-T1-GE3
- VISHAY FOIL RESISTORS / VPG SI2301BDS-T1-GE3
- VISHAY OPTO SI2301BDS-T1-GE3
- Vishay Intertechnology Inc. SI2301BDS-T1-GE3