SIHF23N60E-GE3 - Vishay / Siliconix

Mfr. #:
SIHF23N60E-GE3
Description:
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
Lifecycle:
New from this manufacturer.
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SIHF23N60E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220FP-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Typical Turn-Off Delay Time: 66 ns
Qg - Gate Charge: 63 nC
Vds - Drain-Source Breakdown Voltage: 600 V
Factory Pack Quantity: 50
Width: 4.7 mm
Vgs th - Gate-Source Threshold Voltage: 4 V
Rise Time: 38 ns
Pd - Power Dissipation: 35 W
Fall Time: 34 ns
Vgs - Gate-Source Voltage: 30 V
Id - Continuous Drain Current: 23 A
Typical Turn-On Delay Time: 22 ns
Rds On - Drain-Source Resistance: 158 mOhms
Height: 15.49 mm
Length: 10.41 mm
Number of Channels: 1 Channel
Unit Weight: 0.211644 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHF23N60E-GE3 Price & Stock

Vishay SIHF23N60E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHF23N60E-GE3-ND----11.8011.802019-12-05T14:01:16Z
TTISIHF23N60E-GE3---14.5112.1912.192019-12-05T07:26:56Z
Mouser78-SIHF23N60E-GE3-24.1019.9416.4212.0512.052019-12-04T22:16:49Z
AvnetSIHF23N60E-GE3----12.5411.042019-12-05T01:59:35Z
Avnet EuropeSIHF23N60E-GE3-14.7113.5311.3311.3311.332019-12-05T08:13:29Z

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SIHF23N60E-GE3 by Vishay MOSFETs | Avnet Europe
SIHF23N60E-GE3 Price & Stock | DigiPart
SIHF23N60E-GE3 TO-220 Full Pack MOSFET N-CH 600V ...
SIHF23N60E-GE3 - Vishay / Siliconix - Transistors - FETs, MOSFETs ...
SIHF23N60E-GE3 - VISHAY | X-ON

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHF23N60E-GE3 due to regional differences or acquisition. SIHF23N60E-GE3 may also be known as the following names:

  • VIS SIHF23N60E-GE3
  • VISH SIHF23N60E-GE3
  • VISHAY INTERTECHNOLOGY INC SIHF23N60E-GE3
  • VISHA SIHF23N60E-GE3
  • VISHAY THIN FILM SIHF23N60E-GE3
  • VISHAY INTERTECHNOLOGY SIHF23N60E-GE3
  • VISHY SIHF23N60E-GE3
  • VISAHY SIHF23N60E-GE3
  • VISH/IR SIHF23N60E-GE3
  • VSHY SIHF23N60E-GE3
  • VSH SIHF23N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHF23N60E-GE3
  • VISHAY ELECTRONIC SIHF23N60E-GE3
  • VSHAY SIHF23N60E-GE3
  • VISHAY FOIL RESISTORS SIHF23N60E-GE3
  • VISHAY AMERICAS INC SIHF23N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHF23N60E-GE3
  • VISHAY AMERICAS SIHF23N60E-GE3
  • VISHAY ELECTRO-FILMS SIHF23N60E-GE3
  • VISHAY COMPONENTS SIHF23N60E-GE3
  • Vishay Semiconductors SIHF23N60E-GE3
  • VISHAY COMPONENTS NEDERLAND SIHF23N60E-GE3
  • VISHAY INTERTEC SIHF23N60E-GE3
  • VISHAY FOIL RESISTORS / VPG SIHF23N60E-GE3
  • VISHAY OPTO SIHF23N60E-GE3
  • Vishay Intertechnology Inc. SIHF23N60E-GE3