SI4816BDY-T1-GE3 - Vishay / Siliconix

Mfr. #:
SI4816BDY-T1-GE3
Description:
MOSFET 30V Vds 20V Vgs SO-8
Lifecycle:
New from this manufacturer.
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Purchase SI4816BDY-T1-GE3

SI4816BDY-T1-GE3 Information

SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Tradename: TrenchFET
Technology: Si
Package / Case: SO-8
Mounting Style: SMD/SMT
Part # Aliases: SI4816DY-T1-E3-S
Series: SI4
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Configuration: Dual
Rise Time: 9 ns, 9 ns
Fall Time: 9 ns, 11 ns
Qg - Gate Charge: 7.8 nC, 11.6 nC
Id - Continuous Drain Current: 6.8 A, 11.4 A
Length: 4.9 mm
Forward Transconductance - Min: 30 S, 31 S
Width: 3.9 mm
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 24 ns, 31 ns
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Rds On - Drain-Source Resistance: 11.5 mOhms, 18.5 mOhms
Typical Turn-On Delay Time: 11 ns, 13 ns
Vgs - Gate-Source Voltage: 10 V
Height: 1.75 mm
Pd - Power Dissipation: 1.4 W, 2.4 W
Vgs th - Gate-Source Threshold Voltage: 1 V
Unit Weight: 0.006596 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SI4816BDY-T1-GE3 Price & Stock

Vishay SI4816BDY-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SI4816BDY-T1-GE3CT-ND2,4812.242.011.481.061.062020-03-02T14:01:37Z
Digi-KeySI4816BDY-T1-GE3DKR-ND2,4812.242.011.481.061.062020-03-02T14:01:37Z
Digi-KeySI4816BDY-T1-GE3TR-ND2,481----0.9432020-03-02T14:01:37Z
Future Electronics 2SI4816BDY-T1-GE315,0001.991.991.991.351.292020-03-02T01:51:07Z
Future ElectronicsSI4816BDY-T1-GE315,000----0.9032020-03-02T01:51:07Z
Mouser781-SI4816BDY-T1-GE34,3562.241.951.531.100.9942020-02-28T22:21:34Z
element14 APAC2101479222.462.211.631.171.172020-02-29T15:06:13Z
Verical 2SI4816BDY-T1-GE32,500----0.8512020-03-02T17:58:13Z
VericalSI4816BDY-T1-GE3143--1.351.351.352020-03-02T17:58:13Z
Arrow ElectronicsSI4816BDY-T1-GE31431.851.701.351.351.352020-03-02T16:03:34Z
TTISI4816BDY-T1-GE342,500----0.5732020-02-29T09:25:55Z
AvnetSI4816BDY-T1-GE3-----0.9982020-02-29T04:03:43Z
Newark 338AH2375-----1.022020-02-29T03:43:50Z
Newark15R5082-----0.9212020-02-29T03:43:50Z
Newark26R1889-----1.332020-02-29T03:43:50Z
Farnell 22101479--2.041.471.131.022020-02-29T02:51:08Z
Farnell2101479RL----1.131.022020-02-29T02:51:08Z
Avnet EuropeSI4816BDY-T1-GE3-----0.7622020-03-02T07:43:45Z
OMO Electronics322143200---0.3200.2782020-02-28T15:25:07Z
NAC SemiXSFP0000010289817,500----1.172020-03-02T19:47:21Z
Ameya360SI4816BDY-T1-GE3-----0.8402020-02-28T06:24:20Z
SourceabilitySI4816BDY-T1-GE315,971-----2020-02-21T16:07:13Z
Classic ComponentsSI4816BDY-T1-GE33,850-----2020-02-28T00:54:13Z
Chip 1 ExchangeSI4816BDY-T1-GE3910-----2020-02-23T11:43:22Z
Dana MicrosystemsSI4816BDY-T1-GE33,580-----2020-02-26T04:50:47Z
North Star MicroSI4816BDY-T1-GE3Contact-----2015-05-20T05:52:12Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SI4816BDY-T1-GE3 due to regional differences or acquisition. SI4816BDY-T1-GE3 may also be known as the following names:

  • VIS SI4816BDY-T1-GE3
  • VISH SI4816BDY-T1-GE3
  • VISHAY INTERTECHNOLOGY INC SI4816BDY-T1-GE3
  • VISHA SI4816BDY-T1-GE3
  • VISHAY THIN FILM SI4816BDY-T1-GE3
  • VISHAY INTERTECHNOLOGY SI4816BDY-T1-GE3
  • VISHY SI4816BDY-T1-GE3
  • VISAHY SI4816BDY-T1-GE3
  • VISH/IR SI4816BDY-T1-GE3
  • VSHY SI4816BDY-T1-GE3
  • VSH SI4816BDY-T1-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SI4816BDY-T1-GE3
  • VISHAY ELECTRONIC SI4816BDY-T1-GE3
  • VSHAY SI4816BDY-T1-GE3
  • VISHAY FOIL RESISTORS SI4816BDY-T1-GE3
  • VISHAY AMERICAS INC SI4816BDY-T1-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SI4816BDY-T1-GE3
  • VISHAY AMERICAS SI4816BDY-T1-GE3
  • VISHAY ELECTRO-FILMS SI4816BDY-T1-GE3
  • VISHAY COMPONENTS SI4816BDY-T1-GE3
  • Vishay Semiconductors SI4816BDY-T1-GE3
  • VISHAY COMPONENTS NEDERLAND SI4816BDY-T1-GE3
  • VISHAY INTERTEC SI4816BDY-T1-GE3
  • VISHAY FOIL RESISTORS / VPG SI4816BDY-T1-GE3
  • VISHAY OPTO SI4816BDY-T1-GE3
  • Vishay Intertechnology Inc. SI4816BDY-T1-GE3