SIHB33N60E-GE3 - Vishay / Siliconix

Mfr. #:
SIHB33N60E-GE3
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Delivery
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Payment
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SIHB33N60E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Typical Turn-Off Delay Time: 99 ns
Rds On - Drain-Source Resistance: 99 mOhms
Width: 9.65 mm
Vds - Drain-Source Breakdown Voltage: 600 V
Rise Time: 60 ns
Fall Time: 54 ns
Height: 4.83 mm
Vgs th - Gate-Source Threshold Voltage: 4 V
Id - Continuous Drain Current: 33 A
Vgs - Gate-Source Voltage: 30 V
Typical Turn-On Delay Time: 28 ns
Pd - Power Dissipation: 278 W
Factory Pack Quantity: 1000
Qg - Gate Charge: 100 nC
Length: 10.67 mm
Number of Channels: 1 Channel
Unit Weight: 0.050717 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHB33N60E-GE3 Price & Stock

Vishay SIHB33N60E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHB33N60E-GE3-ND13,72346.0441.3731.2923.8123.472019-12-06T13:57:52Z
Mouser78-SIHB33N60E-GE33,97446.0440.3233.2824.2724.272019-12-06T22:54:47Z
element14 APAC23640722,77051.2246.0337.7137.7137.712019-12-07T02:25:34Z
Arrow Electronics 2SIHB33N60E-GE380243.0638.2432.1123.0922.712019-12-06T15:55:35Z
Arrow ElectronicsSIHB33N60E-GE31038.0834.7428.0522.3221.222019-12-06T15:55:35Z
TTISIHB33N60E-GE34,300--28.7423.9623.962019-12-06T07:21:56Z
Verical 3SIHB33N60E-GE38-22.3622.3622.3622.362019-12-06T18:10:53Z
VericalSIHB33N60E-GE3802-38.2432.1123.0922.712019-12-06T18:10:53Z
VericalSIHB33N60E-GE3473--24.1824.1824.182019-12-06T18:10:53Z
Avnet 268W7037-48.6240.3233.1233.1233.122019-12-06T04:29:54Z
AvnetSIHB33N60E-GE3----25.3022.292019-12-06T04:29:54Z
RS Components 29034478P------2019-12-06T20:02:21Z
RS Components9034478------2019-12-06T20:02:21Z
Farnell 223640723,23755.0341.6634.3523.8623.862019-12-06T02:47:48Z
Farnell2364072RL----23.8623.862019-12-06T02:47:48Z
Newark 219X19312,77051.2945.3438.1328.8127.642019-12-06T03:38:55Z
Newark68W703747319.3419.3419.3419.3419.342019-12-06T03:38:55Z
Avnet EuropeSIHB33N60E-GE3---28.7226.0526.052019-12-06T08:24:18Z
SourceabilitySIHB33N60E-GE31,000-----2019-11-26T18:50:02Z
Classic ComponentsSIHB33N60E-GE377-----2019-11-12T23:57:55Z
TMESIHB33N60E-GE3-38.4530.5427.5627.5627.562019-12-06T11:41:10Z
Abacus TechnologiesSIHB33N60E-GE320,328-----2019-12-06T00:07:36Z
Au LingSIHB33N60E-GE3Contact-----2019-11-27T14:34:02Z

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SiHB33N60E MOSFET. Datasheet pdf. Equivalent

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHB33N60E-GE3 due to regional differences or acquisition. SIHB33N60E-GE3 may also be known as the following names:

  • VIS SIHB33N60E-GE3
  • VISH SIHB33N60E-GE3
  • VISHAY INTERTECHNOLOGY INC SIHB33N60E-GE3
  • VISHA SIHB33N60E-GE3
  • VISHAY THIN FILM SIHB33N60E-GE3
  • VISHAY INTERTECHNOLOGY SIHB33N60E-GE3
  • VISHY SIHB33N60E-GE3
  • VISAHY SIHB33N60E-GE3
  • VISH/IR SIHB33N60E-GE3
  • VSHY SIHB33N60E-GE3
  • VSH SIHB33N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHB33N60E-GE3
  • VISHAY ELECTRONIC SIHB33N60E-GE3
  • VSHAY SIHB33N60E-GE3
  • VISHAY FOIL RESISTORS SIHB33N60E-GE3
  • VISHAY AMERICAS INC SIHB33N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHB33N60E-GE3
  • VISHAY AMERICAS SIHB33N60E-GE3
  • VISHAY ELECTRO-FILMS SIHB33N60E-GE3
  • VISHAY COMPONENTS SIHB33N60E-GE3
  • Vishay Semiconductors SIHB33N60E-GE3
  • VISHAY COMPONENTS NEDERLAND SIHB33N60E-GE3
  • VISHAY INTERTEC SIHB33N60E-GE3
  • VISHAY FOIL RESISTORS / VPG SIHB33N60E-GE3
  • VISHAY OPTO SIHB33N60E-GE3
  • Vishay Intertechnology Inc. SIHB33N60E-GE3