Mfr. #:
2N1613
Description:
Bipolar Transistors - BJT NPN Gen Pur SS
Lifecycle:
New from this manufacturer.
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2N1613 Information

Images are for reference only. Mfr. #: 2N1613 is in stock.
See Product Specifications for more details.
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Specifications

RoHS: Y
Subcategory: Transistors
Mounting Style: Through Hole
Package / Case: TO-39-3
Configuration: Single
Transistor Polarity: NPN
Brand: Central Semiconductor
Manufacturer: Central Semiconductor
Packaging: Bulk
Product Category: Bipolar Transistors - BJT
Product Type: BJTs - Bipolar Transistors
Length: 9.4 mm
Width: 9.4 mm
Collector- Base Voltage VCBO: 75 V
Emitter- Base Voltage VEBO: 7 V
Gain Bandwidth Product fT: 60 MHz
Height: 6.6 mm
Continuous Collector Current: 500 mA
Factory Pack Quantity: 500
Collector- Emitter Voltage VCEO Max: 50 V
DC Collector/Base Gain hfe Min: 40
Pd - Power Dissipation: 3 W
Part # Aliases: 2N1613 PBFREE
Series: 2N1613
DC Current Gain hFE Max: 120
Collector-Emitter Saturation Voltage: 1.5 V
Maximum DC Collector Current: 0.5 A
Unit Weight: 0.035486 oz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C

2N1613 Price & Stock

RFMD 2N1613 pricing and available inventory.

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Alternate Names

RFMD has several brands around the world that may have alternate names for 2N1613 due to regional differences or acquisition. 2N1613 may also be known as the following names:

  • RF MICRO DEVICES 2N1613
  • RF MICRO 2N1613
  • STANFORD 2N1613
  • STANFORD MICRODEVICES 2N1613
  • SIR 2N1613
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  • MICRO LIN 2N1613
  • MCLN 2N1613
  • RF Micro Devices (RFMD) 2N1613
  • MICROLINE 2N1613
  • RF MICRO-DEV 2N1613
  • RF MICRO DEVICE 2N1613
  • RF MICRO DEVICES INC 2N1613
  • RF MICRO DEVIC 2N1613
  • RFMD (VA) 2N1613
  • RFMD INC 2N1613
  • RF MICRO DIVICE 2N1613