Mfr. #:
ZTX457STOA
Description:
Bipolar Transistors - BJT NPN High Voltage
Lifecycle:
New from this manufacturer.
Delivery
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ZTX457STOA Information

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Specifications

RoHS: Y
Subcategory: Transistors
Mounting Style: Through Hole
Package / Case: TO-92-3
Configuration: Single
Transistor Polarity: NPN
Brand: Diodes Incorporated
Manufacturer: Diodes Incorporated
Packaging: Bulk
Product Category: Bipolar Transistors - BJT
Product Type: BJTs - Bipolar Transistors
Gain Bandwidth Product fT: 75 MHz
DC Current Gain hFE Max: 50 at 10 mA, 10 V
DC Collector/Base Gain hfe Min: 50 at 10 mA, 10 V, 50 at 50 mA, 10 V, 25 at 100 mA, 10 V
Emitter- Base Voltage VEBO: 5 V
Length: 4.77 mm
Height: 4.01 mm
Collector- Base Voltage VCBO: 300 V
Collector- Emitter Voltage VCEO Max: 300 V
Factory Pack Quantity: 2000
Width: 2.41 mm
Pd - Power Dissipation: 1 W
Maximum DC Collector Current: 0.5 A
Continuous Collector Current: 0.5 A
Unit Weight: 0.016000 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

ZTX457STOA Price & Stock

Diodes Inc. ZTX457STOA pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
NexxonZTX457STOAContact-----2018-02-27T00:44:39Z
Sierra ICZTX457STOAContact-----2019-09-03T21:05:22Z

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Alternate Names

Diodes Inc. has several brands around the world that may have alternate names for ZTX457STOA due to regional differences or acquisition. ZTX457STOA may also be known as the following names:

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