Mfr. #:
IXYT30N65C3H1HV
Description:
IGBT Transistors 650V/60A XPT Copacked TO-268HV
Lifecycle:
New from this manufacturer.
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IXYT30N65C3H1HV Information

Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More

Specifications

RoHS: Y
Tradename: XPT
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-268HV-2
Configuration: Single
Technology: Si
Series: IXYT30N65C3
Brand: IXYS
Manufacturer: IXYS
Subcategory: IGBTs
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current at 25 C: 60 A
Continuous Collector Current Ic Max: 60 A
Maximum Gate Emitter Voltage: 30 V
Factory Pack Quantity: 30
Pd - Power Dissipation: 270 W
Collector-Emitter Saturation Voltage: 2.35 V
Gate-Emitter Leakage Current: 100 nA
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IXYT30N65C3H1HV Price & Stock

IXYS IXYT30N65C3H1HV pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser747-IXYT30N65C3H1HV974.3566.9055.0750.1150.112020-03-25T21:13:01Z
Digi-KeyIXYT30N65C3H1HV-ND---58.1258.1258.122020-03-25T13:07:14Z
TMEIXYT30N65C3H1HV-58.0646.2541.5241.5241.522020-03-25T10:58:10Z

AD5242BRUZ1M distributor

IXYT30N65C3H1HV IXYH30N65C3H1 - LittelfuseIXYT30N65C3H1HV - Planar Series - XPT Discrete IGBTs - Littelfuse
IXYT30N65C3H1HV IXYH30N65C3H1 - Littelfuse
IXYT30N65C3H1HV - Planar Series - XPT Discrete IGBTs - Littelfuse
IXYT30N65C3H1HV IXYS | Mouser
IXYT30N65C3H1HV IXYS | Discrete Semiconductor Products ...
IXYT30N65C3H1HV IXYS - Transistor: IGBT | GenX3™; 650V; 30A ...
IXYT30N65C3H1HV IGBT. Datasheet pdf. EquivalentIXYT30N65C3H1HV Datasheet | IXYS - Datasheetspdf.com
IXYT30N65C3H1HV IGBT. Datasheet pdf. Equivalent
IXYT30N65C3H1HV Datasheet | IXYS - Datasheetspdf.com
IXYT30N65C3H1HV Datasheet(PDF) - IXYS Corporation
IXYT30N65C3H1HV IGBT - TransistorData: Datasheets, Top ...
IXYT30N65C3H1HV IXYS - chip1stop.com - チップワンストップ

Alternate Names

IXYS has several brands around the world that may have alternate names for IXYT30N65C3H1HV due to regional differences or acquisition. IXYT30N65C3H1HV may also be known as the following names:

  • IXYS CORPORATION IXYT30N65C3H1HV
  • IXY IXYT30N65C3H1HV
  • IXYS CORP IXYT30N65C3H1HV
  • IXYS SEMICONDUCTOR IXYT30N65C3H1HV
  • IXYS Integrated Circuits Division IXYT30N65C3H1HV
  • IXYS Integrated Circuits/Clare IXYT30N65C3H1HV
  • IXYS GMBH IXYT30N65C3H1HV
  • IXYS-DIRECTED ENERGY IXYT30N65C3H1HV
  • IXYS Integrated Circuits Division Inc IXYT30N65C3H1HV
  • IXYS SEMICONDUCTOR GMBH IXYT30N65C3H1HV
  • IXYS (VA) IXYT30N65C3H1HV
  • IXYS CORPO IXYT30N65C3H1HV
  • IXYS Semiconducter GmbH IXYT30N65C3H1HV
  • IXYS SEMICONDUCTOR CORP IXYT30N65C3H1HV
  • IXYS INTEGCIRCUITS DIV(CLARE) IXYT30N65C3H1HV
  • IXYS Colorado (IXYS RF Division) IXYT30N65C3H1HV
  • IXYS SEMICOND IXYT30N65C3H1HV
  • IXYS Integrated Circuits IXYT30N65C3H1HV
  • Zilog/IXYS IXYT30N65C3H1HV
  • IXYSCOR IXYT30N65C3H1HV
  • Clare/LXYS Corporation IXYT30N65C3H1HV
  • IXYS-RF IXYT30N65C3H1HV
  • CP CLAIRE IXYT30N65C3H1HV
  • Clare (IXYS) IXYT30N65C3H1HV
  • IXYS CORPORATION|V IXYT30N65C3H1HV