Mfr. #:
MAGX-001220-100L00
Description:
RF JFET Transistors 1.2-2.0GHz 50Volt 100W Pk Gain 15.1dB
Lifecycle:
New from this manufacturer.
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MAGX-001220-100L00 Information

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Specifications

RoHS: Y
Packaging: Tray
Subcategory: Transistors
Mounting Style: SMD/SMT
Product Category: RF JFET Transistors
Product Type: RF JFET Transistors
Product: RF JFET
Transistor Polarity: N-Channel
Brand: MACOM
Manufacturer: MACOM
Transistor Type: HEMT
Type: GaN SiC HEMT
Technology: GaN SiC
Id - Continuous Drain Current: 4.5 A
Factory Pack Quantity: 25
Forward Transconductance - Min: 2.5 S
Vds - Drain-Source Breakdown Voltage: 175 V
Gain: 14.8 dB
Output Power: 100 W
Operating Frequency: 1.2 GHz to 2 GHz
Vgs - Gate-Source Breakdown Voltage: - 8 V
Operating Temperature Range: - 40 C to + 95 C
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 95 C

MAGX-001220-100L00 Price & Stock

MACOM MAGX-001220-100L00 pricing and available inventory.

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Alternate Names

MACOM has several brands around the world that may have alternate names for MAGX-001220-100L00 due to regional differences or acquisition. MAGX-001220-100L00 may also be known as the following names:

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  • M/A-Com (Tyco - M/A-Com) MAGX-001220-100L00
  • MAC MAGX-001220-100L00
  • MACOM (Metelics) MAGX-001220-100L00
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  • AMP M/A Com MAGX-001220-100L00