Mfr. #:
CGHV1J025D-GP4
Description:
RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt
Lifecycle:
New from this manufacturer.
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CGHV1J025D-GP4 Information

GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Specifications

RoHS: Y
Packaging: Tray
Subcategory: Transistors
Configuration: Single
Mounting Style: Screw Mount
Product Type: RF JFET Transistors
Product Category: RF JFET Transistors
Manufacturer: Qorvo
Brand: Qorvo
Development Kit: QPD1015LPCB401
Series: QPD
Package / Case: NI-360
Transistor Polarity: N-Channel
Transistor Type: HEMT
Technology: GaN SiC
Output Power: 70 W
Pd - Power Dissipation: 64 W
Vds - Drain-Source Breakdown Voltage: 50 V
Operating Frequency: 3.7 GHz
Factory Pack Quantity: 25
Gain: 20 dB
Id - Continuous Drain Current: 2.5 A
Vgs - Gate-Source Breakdown Voltage: 145 V
Operating Temperature Range: - 40 C to + 85 C
Minimum Operating Temperature: - 40 C
Vgs th - Gate-Source Threshold Voltage: - 2.8 V
Maximum Operating Temperature: + 85 C

CGHV1J025D-GP4 Price & Stock

Wolfspeed CGHV1J025D-GP4 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyCGHV1J025D-GP4-ND90-293.47293.47293.47293.472019-12-10T13:56:00Z
Richardson RFPDCGHV1J025D-GP4---300.01300.01300.012019-12-10T02:46:12Z

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Alternate Names

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