Mfr. #:
HGTG20N60B3D
Description:
IGBT Transistors 600V IGBT UFS N-Channel
Lifecycle:
New from this manufacturer.
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HGTG20N60B3D Information

Images are for reference only. Mfr. #: HGTG20N60B3D is in stock.
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Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-247-3
Configuration: Single
Technology: Si
Brand: ON Semiconductor / Fairchild
Manufacturer: ON Semiconductor
Subcategory: IGBTs
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Part # Aliases: HGTG20N60B3D_NL
Series: HGTG20N60B3D
Collector- Emitter Voltage VCEO Max: 600 V
Factory Pack Quantity: 450
Continuous Collector Current: 40 A
Continuous Collector Current Ic Max: 40 A
Width: 4.82 mm
Height: 20.82 mm
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 20 A
Pd - Power Dissipation: 165 W
Length: 15.87 mm
Collector-Emitter Saturation Voltage: 1.8 V
Unit Weight: 0.225401 oz
Minimum Operating Temperature: - 40 C
Gate-Emitter Leakage Current: +/- 100 nA
Maximum Operating Temperature: + 150 C

HGTG20N60B3D Price & Stock

ON Semiconductor HGTG20N60B3D pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyHGTG20N60B3DFS-ND47925.6923.1017.4713.2913.292019-12-30T13:58:02Z
Avnet 2HGTG20N60B3D4--11.9811.3611.362019-12-31T01:34:11Z
Avnet58K8902-37.7432.2427.9927.9927.992019-12-31T01:34:11Z
Future ElectronicsHGTG20N60B3D36315.8115.8115.8115.4215.422019-12-31T00:12:06Z
Mouser512-HGTG20N60B3D47625.6221.7918.8713.9313.932019-12-30T07:49:37Z
element14 APAC98466036,86026.9222.8919.8214.6314.632019-12-31T02:22:14Z
Arrow Electronics 2HGTG20N60B3D1,37021.2318.8515.7614.3214.322019-12-30T16:05:05Z
Arrow ElectronicsHGTG20N60B3D36124.0620.8717.0015.2015.202019-12-30T07:49:37Z
Verical 3HGTG20N60B3D1,365-11.6811.0510.4810.482019-12-30T07:49:37Z
VericalHGTG20N60B3D361-20.8717.0015.2015.202019-12-30T07:49:37Z
VericalHGTG20N60B3D406--25.5324.8324.832019-12-30T07:49:37Z
Farnell98466039,19427.8023.7320.5017.4517.452019-12-31T02:56:56Z
Newark 258K890240617.6917.6917.6916.2216.222019-12-31T00:43:32Z
Newark27AC6330419.7119.7118.8018.0318.032019-12-25T12:19:47Z
Avnet EuropeHGTG20N60B3D------2019-12-31T07:57:37Z
Ameya360HGTG20N60B3D363---15.3215.322019-12-27T02:12:44Z
Chip One Stop GlobalC1S22660057389610040.0026.2225.7625.7625.762019-12-31T13:51:38Z
SourceabilityHGTG20N60B3D363-----2019-12-18T20:43:39Z
LTL Group40313401,000-----2019-12-30T02:28:42Z
GreenTree ElectronicsHGTG20N60B3D3,650-----2019-11-06T14:43:13Z
OMO Electronics145285574--12.5910.6310.632019-12-31T09:16:58Z
Distrelec1710038411639.0832.5226.9723.5323.532019-12-31T11:22:11Z
TMEHGTG20N60B3D10623.6416.3714.7114.7114.712019-12-27T12:15:44Z
Dana MicrosystemsHGTG20N60B3D63-----2019-12-31T02:31:16Z
Classic ComponentsHGTG20N60B3D2,079-----2019-12-24T18:41:18Z
Abacus TechnologiesHGTG20N60B3D508-----2019-12-06T00:07:36Z
Sierra ICHGTG20N60B3DContact-----2019-12-16T00:48:56Z
North Star MicroHGTG20N60B3DContact-----2015-05-20T05:52:12Z

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Description
$9.99 shipping$3.98 shipping$12.18 shipping·Manufacturerevice combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 C and 150 C. The diode used in anti-parallel with the IGBT is the RHRP3060.… MORE

Alternate Names

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  • ON SEMICONDUCTOR COR HGTG20N60B3D
  • ONSM HGTG20N60B3D
  • ON SEMICOND HGTG20N60B3D
  • ON SEMICO HGTG20N60B3D
  • ON SEMICONDUCTOR/FAIRCHILD HGTG20N60B3D
  • MOT/ON SEMI HGTG20N60B3D
  • ON SEMICONDUCTOR CORPORATION HGTG20N60B3D
  • ON4 HGTG20N60B3D
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  • Fairchild (ON Semiconductor) HGTG20N60B3D
  • ON-SEMI SCG HGTG20N60B3D
  • ON SEMICONDUTOR HGTG20N60B3D
  • ON/PBF HGTG20N60B3D
  • ON SEMICONDUCTOR (VA) HGTG20N60B3D
  • ON Semiconductor Inc. HGTG20N60B3D
  • onsemiconductor HGTG20N60B3D