SI8823EDB-T2-E1 - Vishay / Siliconix

Mfr. #:
SI8823EDB-T2-E1
Description:
MOSFET -20V Vds 8V Vgs MICRO FOOT
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase SI8823EDB-T2-E1

SI8823EDB-T2-E1 Information

Si88xx 8V TrenchFET® Power MOSFETs
Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chipscale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package which occupies up to 36 % less board space than the next smallest chipscale devices, yet offer comparable − and even lower − on resistance (RDS(on)). These Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs can be used for load switching in handheld devices including smart phones, tablets, portable media players, and mobile computing devices. The Si88xx 8V TrenchFET® Power MOSFETs' ultra-thin 0.357 mm profiles saves valuable board space in these applications − enabling smaller, slimmer mobile products.Learn More
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Series: SI8
Packaging: Reel
Transistor Polarity: P-Channel
Package / Case: MicroFoot-4
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Pd - Power Dissipation: 900 mW
Vgs th - Gate-Source Threshold Voltage: 800 mV
Vgs - Gate-Source Voltage: 8 V
Rds On - Drain-Source Resistance: 77 mOhms
Typical Turn-Off Delay Time: 60 ns
Forward Transconductance - Min: 6 S
Fall Time: 40 ns
Factory Pack Quantity: 3000
Rise Time: 30 ns
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 2.7 A
Qg - Gate Charge: 17 nC
Typical Turn-On Delay Time: 16 ns
Length: 1.6 mm
Width: 1.6 mm
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Height: 0.65 mm
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SI8823EDB-T2-E1 Price & Stock

Vishay SI8823EDB-T2-E1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
AvnetSI8823EDB-T2-E112,000----0.1322020-03-03T02:23:07Z
Digi-Key 3SI8823EDB-T2-E1DKR-ND-0.5550.4510.2590.1630.1632020-03-02T14:01:37Z
Digi-KeySI8823EDB-T2-E1CT-ND-0.5550.4510.2590.1630.1632020-03-02T14:01:37Z
Digi-KeySI8823EDB-T2-E1TR-ND-----0.1402020-03-02T14:01:37Z
Mouser78-SI8823EDB-T2-E1-0.5550.4140.2720.1640.1502020-03-03T00:15:16Z
TTISI8823EDB-T2-E1------2020-03-03T07:25:51Z
Avnet EuropeSI8823EDB-T2-E1-0.3080.2770.2310.2310.2312020-03-03T08:12:42Z
Ameya360SI8823EDB-T2-E1-----0.1482020-02-28T06:24:20Z
Select TechnologySI8823EDB-T2-E1997-----2019-07-02T15:50:49Z

AD5242BRUZ1M distributor

SI8823EDB-T2-E1 Vishay Semiconductors | Mouser
Si8823EDB P-Channel 20 V (D-S) MOSFET - Vishay
Aug 8, 2016
SI8823EDB-T2-E1 Vishay Siliconix - Digikey
SI8823EDB-T2-E1 by Vishay MOSFETs | Avnet
SI8823EDB-T2-E1 - Vishay - Datasheet, Prices & Inventory
SI8823EDB-T2-E1 - ФЕТ, МОСФЕТ
SI8823EDB-T2-E1 Vishay / Siliconix transistorum - fets, mosfets
Obsolescence of Commercial Power Mosfets - TTI Europe
Mar 14, 2018
SI8823EDB-T2-E1 - Vishay
Si8823EDB MOSFET Datasheet pdf - Vishay - Datasheetspdf ...

Alternate Names

Vishay has several brands around the world that may have alternate names for SI8823EDB-T2-E1 due to regional differences or acquisition. SI8823EDB-T2-E1 may also be known as the following names:

  • VIS SI8823EDB-T2-E1
  • VISH SI8823EDB-T2-E1
  • VISHAY INTERTECHNOLOGY INC SI8823EDB-T2-E1
  • VISHA SI8823EDB-T2-E1
  • VISHAY THIN FILM SI8823EDB-T2-E1
  • VISHAY INTERTECHNOLOGY SI8823EDB-T2-E1
  • VISHY SI8823EDB-T2-E1
  • VISAHY SI8823EDB-T2-E1
  • VISH/IR SI8823EDB-T2-E1
  • VSHY SI8823EDB-T2-E1
  • VSH SI8823EDB-T2-E1
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SI8823EDB-T2-E1
  • VISHAY ELECTRONIC SI8823EDB-T2-E1
  • VSHAY SI8823EDB-T2-E1
  • VISHAY FOIL RESISTORS SI8823EDB-T2-E1
  • VISHAY AMERICAS INC SI8823EDB-T2-E1
  • VISHAY INTERTECHNOLOGY ASIA PT SI8823EDB-T2-E1
  • VISHAY AMERICAS SI8823EDB-T2-E1
  • VISHAY ELECTRO-FILMS SI8823EDB-T2-E1
  • VISHAY COMPONENTS SI8823EDB-T2-E1
  • Vishay Semiconductors SI8823EDB-T2-E1
  • VISHAY COMPONENTS NEDERLAND SI8823EDB-T2-E1
  • VISHAY INTERTEC SI8823EDB-T2-E1
  • VISHAY FOIL RESISTORS / VPG SI8823EDB-T2-E1
  • VISHAY OPTO SI8823EDB-T2-E1
  • Vishay Intertechnology Inc. SI8823EDB-T2-E1