BSM50GD120DN2G - Infineon Technologies

Mfr. #:
BSM50GD120DN2G
Description:
IGBT Modules 1200V 50A 3-PHASE
Lifecycle:
New from this manufacturer.
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BSM50GD120DN2G Information

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Specifications

Technology: Si
RoHS: N
Brand: Infineon Technologies
Manufacturer: Infineon
Subcategory: IGBTs
Product: IGBT Silicon Modules
Product Category: IGBT Modules
Product Type: IGBT Modules
Configuration: Hex
Package / Case: EconoPACK 3A
Mounting Style: Chassis Mount
Continuous Collector Current at 25 C: 78 A
Width: 62 mm
Pd - Power Dissipation: 400 W
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: 20 V
Collector-Emitter Saturation Voltage: 2.5 V
Height: 17 mm
Length: 122 mm
Collector- Emitter Voltage VCEO Max: 1200 V
Factory Pack Quantity: 10
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C

BSM50GD120DN2G Price & Stock

Infineon BSM50GD120DN2G pricing and available inventory.

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AD5242BRUZ1M distributor

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Alternate Names

Infineon has several brands around the world that may have alternate names for BSM50GD120DN2G due to regional differences or acquisition. BSM50GD120DN2G may also be known as the following names:

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