IPG20N10S4L22ATMA1 - Infineon Technologies

Mfr. #:
IPG20N10S4L22ATMA1
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
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IPG20N10S4L22ATMA1 Information

Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Inductive Wireless Charging – In-Car Charging
Infineon Technologies Inductive Wireless Charging – In-Car Charging allows for placing devices in a designated area to charge without a wired connection. Automotive inductive wireless charging is growing in the latest generation of cars. In fact, it’s predicted that most cars will have the feature in the very near future.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.

Specifications

RoHS: Y
Package / Case: TDSON-8
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPG20N10S4L-22 IPG2N1S4L22XT SP000866570
Series: IPG20N10
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Pd - Power Dissipation: 60 W
Factory Pack Quantity: 5000
Length: 5.9 mm
Width: 5.15 mm
Typical Turn-On Delay Time: 5 ns, 5 ns
Typical Turn-Off Delay Time: 30 ns, 30 ns
Rise Time: 3 ns, 3 ns
Qg - Gate Charge: 27 nC, 27 nC
Rds On - Drain-Source Resistance: 20 mOhms, 20 mOhms
Id - Continuous Drain Current: 20 A
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Fall Time: 18 ns, 18 ns
Vgs - Gate-Source Voltage: 16 V
Vds - Drain-Source Breakdown Voltage: 100 V
Height: 1.27 mm
Vgs th - Gate-Source Threshold Voltage: 1.1 V
Unit Weight: 0.003439 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IPG20N10S4L22ATMA1 Price & Stock

Infineon IPG20N10S4L22ATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3IPG20N10S4L22ATMA1CT-ND7,17711.4410.267.555.425.422019-12-14T13:54:59Z
Digi-KeyIPG20N10S4L22ATMA1DKR-ND7,17711.4410.267.555.425.422019-12-14T13:54:59Z
Digi-KeyIPG20N10S4L22ATMA1TR-ND5,000----4.622019-12-14T13:54:59Z
Mouser726-IPG20N10S4L-2211,15411.029.347.465.454.702019-12-13T17:12:10Z
element14 APAC272585710,95310.969.307.445.444.882019-12-14T02:30:41Z
Arrow ElectronicsIPG20N10S4L22ATMA19710.459.038.948.948.942019-12-14T15:33:53Z
VericalIPG20N10S4L22ATMA197-9.038.948.948.942019-12-14T17:59:55Z
Farnell 2272585711,491-10.888.395.715.492019-12-14T02:46:16Z
Farnell2725857RL--10.888.395.715.492019-12-14T02:46:16Z
Newark13AC90595,07711.029.347.465.455.452019-12-13T17:12:11Z
Avnet EuropeSP000866570490,000-----2019-12-14T07:58:26Z
NAC SemiXSKDRABV005204130,599----7.042019-12-14T13:24:00Z
LTL Group576305010,835-----2019-12-14T06:25:25Z
GreenTree ElectronicsIPG20N10S4L22ATMA1599-----2019-11-06T14:43:13Z
OMO Electronics60355312,000--9.487.767.762019-12-13T11:32:30Z
Abacus TechnologiesIPG20N10S4L22ATMA160,984-----2019-12-06T00:07:36Z
Au LingIPG20N10S4L22ATMA1Contact-----2019-11-27T14:34:02Z
Sierra ICIPG20N10S4L22ATMA1Contact-----2019-09-03T21:05:22Z

AD5242BRUZ1M distributor

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Alternate Names

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  • INF IPG20N10S4L22ATMA1
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