Mfr. #:
2N5551ZL1G
Description:
Bipolar Transistors - BJT 600mA 180V NPN
Lifecycle:
New from this manufacturer.
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2N5551ZL1G Information

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Specifications

RoHS: Y
Subcategory: Transistors
Mounting Style: Through Hole
Package / Case: TO-92-3
Configuration: Single
Brand: ON Semiconductor
Manufacturer: ON Semiconductor
Transistor Polarity: NPN
Product Category: Bipolar Transistors - BJT
Product Type: BJTs - Bipolar Transistors
Packaging: Ammo Pack
DC Collector/Base Gain hfe Min: 80
Pd - Power Dissipation: 625 mW
Emitter- Base Voltage VEBO: 6 V
Height: 5.33 mm
Length: 5.2 mm
Width: 4.19 mm
Gain Bandwidth Product fT: 300 MHz
Series: 2N5551
Factory Pack Quantity: 2000
Collector- Base Voltage VCBO: 180 V
Collector- Emitter Voltage VCEO Max: 160 V
Continuous Collector Current: 0.6 A
Maximum DC Collector Current: 0.6 A
Collector-Emitter Saturation Voltage: 0.25 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

2N5551ZL1G Price & Stock

ON Semiconductor 2N5551ZL1G pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Rochester Electronics2N5551ZL1G40,0000.6320.6320.5620.5620.5622019-11-14T09:40:43Z
Avnet2N5551ZL1G------2019-11-15T02:26:35Z
LTL Group3589694752-----2019-11-10T03:06:17Z
Dana Microsystems2N5551ZL1G5,000-----2019-10-01T16:44:51Z
TransparentC2N5551ZL1GContact-----2016-01-28T17:08:50Z
North Star Micro2N5551ZL1GContact-----2015-05-20T05:52:12Z
Sierra IC2N5551ZL1GContact-----2019-09-03T21:05:22Z

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Alternate Names

ON Semiconductor has several brands around the world that may have alternate names for 2N5551ZL1G due to regional differences or acquisition. 2N5551ZL1G may also be known as the following names:

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