- Mfr. #:
- SIHB23N60E-GE3
- Description:
- MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIHB23N60E-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- E Series High Voltage MOSFETs
- Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Package / Case: | TO-263-3 |
Configuration: | Single |
Technology: | Si |
Mounting Style: | SMD/SMT |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Type: | MOSFET |
Product Category: | MOSFET |
Channel Mode: | Enhancement |
Series: | E |
Packaging: | Bulk |
Width: | 9.65 mm |
Typical Turn-Off Delay Time: | 66 ns |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Qg - Gate Charge: | 63 nC |
Height: | 4.83 mm |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Rise Time: | 38 ns |
Fall Time: | 34 ns |
Vgs - Gate-Source Voltage: | 30 V |
Id - Continuous Drain Current: | 23 A |
Pd - Power Dissipation: | 227 W |
Typical Turn-On Delay Time: | 22 ns |
Rds On - Drain-Source Resistance: | 158 mOhms |
Factory Pack Quantity: | 1000 |
Length: | 10.67 mm |
Number of Channels: | 1 Channel |
Unit Weight: | 0.050717 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SIHB23N60E-GE3 Price & Stock
Vishay SIHB23N60E-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SIHB23N60E-GE3-ND | 641 | 26.35 | 23.66 | 17.90 | 13.62 | 12.23 | 2019-12-02T13:47:43Z |
Mouser | 78-SIHB23N60E-GE3 | 710 | 27.83 | 23.04 | 18.95 | 15.01 | 12.54 | 2019-12-02T07:22:27Z |
element14 APAC | 2400377 | 1,000 | 27.41 | 22.70 | 18.67 | 14.78 | 14.78 | 2019-12-03T02:25:21Z |
Avnet | SIHB23N60E-GE3 | - | - | - | - | 14.47 | 12.75 | 2019-12-03T01:21:47Z |
TTI | SIHB23N60E-GE3 | - | - | - | - | - | - | 2019-12-03T07:21:23Z |
Farnell | 2400377 | 1,000 | 33.31 | 24.80 | 20.22 | 14.00 | 14.00 | 2019-12-02T15:06:39Z |
Newark | 40X8671 | 1,000 | 27.83 | 23.04 | 18.95 | 15.01 | 15.01 | 2019-12-02T07:22:27Z |
Avnet Europe | SIHB23N60E-GE3 | - | - | - | 14.11 | 11.83 | 11.83 | 2019-12-03T07:37:04Z |
Sourceability | SIHB23N60E-GE3 | 3,000 | - | - | - | - | - | 2019-11-26T18:50:02Z |
LTL Group | 4285250 | - | - | - | - | - | - | 2019-12-02T05:01:09Z |
Nexxon | SIHB23N60E-GE3 | Contact | - | - | - | - | - | 2018-02-27T00:44:39Z |
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Alternate Names
Vishay has several brands around the world that may have alternate names for SIHB23N60E-GE3 due to regional differences or acquisition. SIHB23N60E-GE3 may also be known as the following names:
- VIS SIHB23N60E-GE3
- VISH SIHB23N60E-GE3
- VISHAY INTERTECHNOLOGY INC SIHB23N60E-GE3
- VISHA SIHB23N60E-GE3
- VISHAY THIN FILM SIHB23N60E-GE3
- VISHAY INTERTECHNOLOGY SIHB23N60E-GE3
- VISHY SIHB23N60E-GE3
- VISAHY SIHB23N60E-GE3
- VISH/IR SIHB23N60E-GE3
- VSHY SIHB23N60E-GE3
- VSH SIHB23N60E-GE3
- VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHB23N60E-GE3
- VISHAY ELECTRONIC SIHB23N60E-GE3
- VSHAY SIHB23N60E-GE3
- VISHAY FOIL RESISTORS SIHB23N60E-GE3
- VISHAY AMERICAS INC SIHB23N60E-GE3
- VISHAY INTERTECHNOLOGY ASIA PT SIHB23N60E-GE3
- VISHAY AMERICAS SIHB23N60E-GE3
- VISHAY ELECTRO-FILMS SIHB23N60E-GE3
- VISHAY COMPONENTS SIHB23N60E-GE3
- Vishay Semiconductors SIHB23N60E-GE3
- VISHAY COMPONENTS NEDERLAND SIHB23N60E-GE3
- VISHAY INTERTEC SIHB23N60E-GE3
- VISHAY FOIL RESISTORS / VPG SIHB23N60E-GE3
- VISHAY OPTO SIHB23N60E-GE3
- Vishay Intertechnology Inc. SIHB23N60E-GE3