- Mfr. #:
- SIHB33N60E-E3
- Description:
- MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIHB33N60E-E3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- E Series High Voltage MOSFETs
- Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Package / Case: | TO-263-3 |
Configuration: | Single |
Technology: | Si |
Mounting Style: | SMD/SMT |
Part # Aliases: | SIHB33N60E |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Channel Mode: | Enhancement |
Series: | E |
Packaging: | Bulk |
Typical Turn-Off Delay Time: | 99 ns |
Rds On - Drain-Source Resistance: | 99 mOhms |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Rise Time: | 60 ns |
Fall Time: | 54 ns |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Id - Continuous Drain Current: | 33 A |
Vgs - Gate-Source Voltage: | 30 V |
Typical Turn-On Delay Time: | 28 ns |
Pd - Power Dissipation: | 278 W |
Factory Pack Quantity: | 1000 |
Qg - Gate Charge: | 100 nC |
Number of Channels: | 1 Channel |
Unit Weight: | 0.050717 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SIHB33N60E-E3 Price & Stock
Vishay SIHB33N60E-E3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Avnet | SIHB33N60E-E3 | - | - | - | - | 28.01 | 24.67 | 2020-01-18T02:45:17Z |
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Alternate Names
Vishay has several brands around the world that may have alternate names for SIHB33N60E-E3 due to regional differences or acquisition. SIHB33N60E-E3 may also be known as the following names:
- VIS SIHB33N60E-E3
- VISH SIHB33N60E-E3
- VISHAY INTERTECHNOLOGY INC SIHB33N60E-E3
- VISHA SIHB33N60E-E3
- VISHAY THIN FILM SIHB33N60E-E3
- VISHAY INTERTECHNOLOGY SIHB33N60E-E3
- VISHY SIHB33N60E-E3
- VISAHY SIHB33N60E-E3
- VISH/IR SIHB33N60E-E3
- VSHY SIHB33N60E-E3
- VSH SIHB33N60E-E3
- VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHB33N60E-E3
- VISHAY ELECTRONIC SIHB33N60E-E3
- VSHAY SIHB33N60E-E3
- VISHAY FOIL RESISTORS SIHB33N60E-E3
- VISHAY AMERICAS INC SIHB33N60E-E3
- VISHAY INTERTECHNOLOGY ASIA PT SIHB33N60E-E3
- VISHAY AMERICAS SIHB33N60E-E3
- VISHAY ELECTRO-FILMS SIHB33N60E-E3
- VISHAY COMPONENTS SIHB33N60E-E3
- Vishay Semiconductors SIHB33N60E-E3
- VISHAY COMPONENTS NEDERLAND SIHB33N60E-E3
- VISHAY INTERTEC SIHB33N60E-E3
- VISHAY FOIL RESISTORS / VPG SIHB33N60E-E3
- VISHAY OPTO SIHB33N60E-E3
- Vishay Intertechnology Inc. SIHB33N60E-E3