- Mfr. #:
- SQJQ900E-T1_GE3
- Description:
- MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SQJQ900E-T1_GE3 Information
- SQ Automotive Power MOSFETs
- Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Vishay / Siliconix |
| Manufacturer: | Vishay |
| Tradename: | TrenchFET |
| Technology: | Si |
| Series: | SQ |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel |
| Package / Case: | PowerPAK-8x8L-4 |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Rise Time: | 7.5 ns, 7.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Typical Turn-Off Delay Time: | 30 ns, 30 ns |
| Rds On - Drain-Source Resistance: | 3.4 mOhms, 3.4 mOhms |
| Factory Pack Quantity: | 2000 |
| Vgs - Gate-Source Voltage: | 20 V |
| Transistor Type: | 2 N-Channel |
| Number of Channels: | 2 Channel |
| Fall Time: | 14 ns, 14 ns |
| Typical Turn-On Delay Time: | 14 ns, 14 ns |
| Pd - Power Dissipation: | 135 W |
| Qg - Gate Charge: | 120 nC, 120 nC |
| Forward Transconductance - Min: | 105 S, 105 S |
| Id - Continuous Drain Current: | 100 A |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
SQJQ900E-T1_GE3 Price & Stock
Vishay SQJQ900E-T1_GE3 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | SQJQ900E-T1_GE3CT-ND | 1 | 15.05 | 13.52 | 9.95 | 7.14 | 7.14 | 2020-01-23T23:05:36Z |
| Digi-Key | SQJQ900E-T1_GE3DKR-ND | 1 | 15.05 | 13.52 | 9.95 | 7.14 | 7.14 | 2020-01-23T23:05:36Z |
| Digi-Key | SQJQ900E-T1_GE3TR-ND | - | - | - | - | - | 6.09 | 2020-01-23T23:05:36Z |
| Arrow Electronics | SQJQ900E-T1_GE3 | 1,830 | 14.04 | 12.63 | 9.70 | 6.67 | 6.51 | 2020-01-26T15:42:58Z |
| Verical | SQJQ900E-T1_GE3 | 1,830 | - | 12.63 | 9.70 | 6.67 | 6.51 | 2020-01-25T17:51:09Z |
| Mouser | 78-SQJQ900E-T1_GE3 | 3,003 | 15.05 | 13.46 | 10.82 | 7.35 | 7.08 | 2020-01-25T00:05:22Z |
| Avnet | SQJQ900E-T1_GE3 | - | - | - | - | - | 6.71 | 2020-01-25T02:16:23Z |
| Avnet Europe | SQJQ900E-T1_GE3 | - | - | - | - | - | 8.73 | 2020-01-27T08:32:37Z |
| TME | SQJQ900E-T1-GE3 | - | 14.14 | 12.69 | 10.09 | 9.40 | 9.40 | 2020-01-27T10:46:41Z |
AD5242BRUZ1M distributor
- SQJQ900E-T1_GE3 Vishay Siliconix - Digikey
- SQJQ900E - Vishay
- Apr 3, 2017
- SQJQ900E-T1_GE3 Vishay / Siliconix | Mouser
- SQJQ900E-T1_GE3 Vishay - MOSFETs - Octopart
- SQJQ900E-T1_GE3 - Vishay - Dual MOSFET, N Channel, 40 V
- SQJQ900E-T1_GE3 by Vishay MOSFET Arrays | Avnet Europe
- SQJQ900E-T1_GE3 VISHAY - Transistor: N-MOSFET x2 - TME
- Jun 17, 2021
- SQJQ900E-T1_GE3 footprint & symbol by Vishay Siliconix
- SQJQ900E-T1_GE3 Vishay, DUAL N-CHANNEL 40-V (D-S) 175C ...
- SQJQ900E-T1_GE3 VISHAY | Rutronik24 Distributor
Alternate Names
Vishay has several brands around the world that may have alternate names for SQJQ900E-T1_GE3 due to regional differences or acquisition. SQJQ900E-T1_GE3 may also be known as the following names:
- VIS SQJQ900E-T1_GE3
- VISH SQJQ900E-T1_GE3
- VISHAY INTERTECHNOLOGY INC SQJQ900E-T1_GE3
- VISHA SQJQ900E-T1_GE3
- VISHAY THIN FILM SQJQ900E-T1_GE3
- VISHAY INTERTECHNOLOGY SQJQ900E-T1_GE3
- VISHY SQJQ900E-T1_GE3
- VISAHY SQJQ900E-T1_GE3
- VISH/IR SQJQ900E-T1_GE3
- VSHY SQJQ900E-T1_GE3
- VSH SQJQ900E-T1_GE3
- VISHAY INTERTECHNOLOGY ASIA PTE LTD SQJQ900E-T1_GE3
- VISHAY ELECTRONIC SQJQ900E-T1_GE3
- VSHAY SQJQ900E-T1_GE3
- VISHAY FOIL RESISTORS SQJQ900E-T1_GE3
- VISHAY AMERICAS INC SQJQ900E-T1_GE3
- VISHAY INTERTECHNOLOGY ASIA PT SQJQ900E-T1_GE3
- VISHAY AMERICAS SQJQ900E-T1_GE3
- VISHAY ELECTRO-FILMS SQJQ900E-T1_GE3
- VISHAY COMPONENTS SQJQ900E-T1_GE3
- Vishay Semiconductors SQJQ900E-T1_GE3
- VISHAY COMPONENTS NEDERLAND SQJQ900E-T1_GE3
- VISHAY INTERTEC SQJQ900E-T1_GE3
- VISHAY FOIL RESISTORS / VPG SQJQ900E-T1_GE3
- VISHAY OPTO SQJQ900E-T1_GE3
- Vishay Intertechnology Inc. SQJQ900E-T1_GE3