IPD80R1K4CEBTMA1 - Infineon Technologies

Mfr. #:
IPD80R1K4CEBTMA1
Description:
MOSFET N-Ch 800V 3.9A DPAK-2
Lifecycle:
New from this manufacturer.
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IPD80R1K4CEBTMA1 Information

OMO is a global distributor of hard-to-find and obsolete parts.
IPD80R1K4CEBTMA1 is available at OMO Electronic.We can offer IPD80R1K4CEBTMA1 for competitive price in the global market, please send us a quotation request for pricing.

Specifications

RoHS: Y
Package / Case: TO-252-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPD80R1K4CE SP001100604
Channel Mode: Enhancement
Series: CoolMOS CE
Tradename: CoolMOS
Vds - Drain-Source Breakdown Voltage: 800 V
Typical Turn-Off Delay Time: 72 ns
Pd - Power Dissipation: 63 W
Length: 6.5 mm
Width: 6.22 mm
Id - Continuous Drain Current: 3.9 A
Factory Pack Quantity: 2500
Typical Turn-On Delay Time: 25 ns
Qg - Gate Charge: 23 nC
Vgs - Gate-Source Voltage: 20 V
Height: 2.3 mm
Vgs th - Gate-Source Threshold Voltage: 2.1 V
Rise Time: 15 ns
Fall Time: 12 ns
Rds On - Drain-Source Resistance: 1.2 Ohms
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.139332 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IPD80R1K4CEBTMA1 Price & Stock

Infineon IPD80R1K4CEBTMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3IPD80R1K4CEBTMA1DKR-ND-7.917.065.503.593.592019-10-29T12:35:07Z
-IPD80R1K4CEBTMA1CT-ND-7.917.065.503.593.592019-10-29T12:35:07Z
-IPD80R1K4CEBTMA1TR-ND-----3.092019-10-29T12:35:07Z
LTL Group4047586799-----2019-11-04T01:25:27Z
Sierra ICIPD80R1K4CEBTMA1Contact-----2019-09-03T21:05:22Z

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Alternate Names

Infineon has several brands around the world that may have alternate names for IPD80R1K4CEBTMA1 due to regional differences or acquisition. IPD80R1K4CEBTMA1 may also be known as the following names:

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