IPW60R170CFD7XKSA1 - Infineon Technologies

Mfr. #:
IPW60R170CFD7XKSA1
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
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IPW60R170CFD7XKSA1 Information

CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-247-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPW60R170CFD7 SP001617988
Channel Mode: Enhancement
Series: CoolMOS CFD7
Tradename: CoolMOS
Fall Time: 9 ns
Pd - Power Dissipation: 75 W
Typical Turn-Off Delay Time: 68 ns
Vds - Drain-Source Breakdown Voltage: 600 V
Typical Turn-On Delay Time: 31 ns
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Qg - Gate Charge: 28 nC
Factory Pack Quantity: 240
Vgs - Gate-Source Voltage: 20 V
Rise Time: 15 ns
Rds On - Drain-Source Resistance: 144 mOhms
Id - Continuous Drain Current: 14 A
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IPW60R170CFD7XKSA1 Price & Stock

Infineon IPW60R170CFD7XKSA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIPW60R170CFD7XKSA1-ND45622.4520.1415.2311.6010.412020-03-16T13:02:28Z
Mouser726-IPW60R170CFD7XKS22522.3819.0216.5113.9913.992020-03-17T00:28:55Z
element14 APAC28079816723.4119.9017.2614.6314.632020-03-14T02:32:31Z
Arrow ElectronicsIPW60R170CFD7XKSA1210---11.5211.302020-03-16T16:59:18Z
AvnetIPW60R170CFD7XKSA1----11.3310.752020-03-14T03:37:25Z
Farnell28079818524.0818.4214.5710.9710.972020-03-14T01:50:32Z
Newark43AC93314722.3819.0216.5113.9913.992020-03-16T02:43:27Z
Avnet EuropeSP001617988150--13.7011.6611.662020-03-16T07:14:38Z
TMEIPW60R170CFD7715.4612.9312.0212.0212.022020-03-16T10:44:45Z
Classic ComponentsIPW60R170CFD7XKSA1139-----2020-03-11T22:08:19Z
Sierra ICIPW60R170CFD7XKSA1Contact-----2020-03-06T17:01:28Z

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Datasheet IPW60R170CFD7 - Infineon Technologies
Aug 25, 2017
IPW60R170CFD7XKSA1 Infineon Technologies | Mouser
IPW60R170CFD7XKSA1 Infineon Technologies - Digikey
IPW60R170CFD7XKSA1 - Infineon - MOSFET, N-CH, 600V
Infineon Technologies AG IPW60R170CFD7XKSA1 MOSFETs
IPW60R170CFD7XKSA1 Infineon, Power MOSFET, N Channel, 600 ...
IPW60R170CFD7XKSA1 - Infineon Technologies - OMO ...
Silicon N-Channel MOSFET, 14 A, 650 V, 3-Pin PG-TO ... - RS
Infineon - Power MOSFET, N Channel, 600 V - Element14
Silicon N-Channel MOSFET, 14 A, 650 V, 3-Pin PG-TO 247-3 ...

Alternate Names

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