IXFB52N90P - IXYS

Mfr. #:
IXFB52N90P
Description:
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Lifecycle:
New from this manufacturer.
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IXFB52N90P Information

900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Configuration: Single
Technology: Si
Package / Case: PLUS-264-3
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Manufacturer: IXYS
Brand: IXYS
Series: IXFB52N90
Tradename: HiPerFET
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 95 ns
Vds - Drain-Source Breakdown Voltage: 900 V
Rise Time: 80 ns
Typical Turn-On Delay Time: 63 ns
Vgs th - Gate-Source Threshold Voltage: 6.5 V
Id - Continuous Drain Current: 52 A
Width: 5.31 mm
Fall Time: 42 ns
Forward Transconductance - Min: 35 S
Qg - Gate Charge: 308 nC
Vgs - Gate-Source Voltage: 30 V
Height: 26.59 mm
Factory Pack Quantity: 25
Length: 20.29 mm
Rds On - Drain-Source Resistance: 160 mOhms
Pd - Power Dissipation: 1.25 kW
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.373904 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXFB52N90P Price & Stock

IXYS IXFB52N90P pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXFB52N90P-ND---148.00148.00148.002020-01-23T23:05:36Z
element14 APAC1829764-217.62213.01194.36194.36194.362020-01-30T02:25:44Z
Newark83R9966-148.03144.91137.55126.25126.252020-01-30T03:11:08Z
Farnell1829764-147.03146.03129.54129.54129.542020-01-30T03:13:49Z
TMEIXFB52N90P45176.52158.95140.61140.61140.612020-01-29T11:05:08Z
Sierra ICIXFB52N90PContact-----2019-12-16T00:48:56Z
North Star MicroIXFB52N90PContact-----2015-05-20T05:52:12Z

AD5242BRUZ1M distributor

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IXFB52N90P - LittelfusePolarâ„¢ Series - N Channel HiPerFETs Discrete MOSFETs
IXFB52N90P - Littelfuse
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IXFB52N90P MOSFET. Datasheet pdf. Equivalent
IXFB52N90P IXYS - Transistor: N-MOSFET | Polarâ„¢; unipolar
Oct 15, 2020

Alternate Names

IXYS has several brands around the world that may have alternate names for IXFB52N90P due to regional differences or acquisition. IXFB52N90P may also be known as the following names:

  • IXYS CORPORATION IXFB52N90P
  • IXY IXFB52N90P
  • IXYS CORP IXFB52N90P
  • IXYS SEMICONDUCTOR IXFB52N90P
  • IXYS Integrated Circuits Division IXFB52N90P
  • IXYS Integrated Circuits/Clare IXFB52N90P
  • IXYS GMBH IXFB52N90P
  • IXYS-DIRECTED ENERGY IXFB52N90P
  • IXYS Integrated Circuits Division Inc IXFB52N90P
  • IXYS SEMICONDUCTOR GMBH IXFB52N90P
  • IXYS (VA) IXFB52N90P
  • IXYS CORPO IXFB52N90P
  • IXYS Semiconducter GmbH IXFB52N90P
  • IXYS SEMICONDUCTOR CORP IXFB52N90P
  • IXYS INTEGCIRCUITS DIV(CLARE) IXFB52N90P
  • IXYS Colorado (IXYS RF Division) IXFB52N90P
  • IXYS SEMICOND IXFB52N90P
  • IXYS Integrated Circuits IXFB52N90P
  • Zilog/IXYS IXFB52N90P
  • IXYSCOR IXFB52N90P
  • Clare/LXYS Corporation IXFB52N90P
  • IXYS-RF IXFB52N90P
  • CP CLAIRE IXFB52N90P
  • Clare (IXYS) IXFB52N90P
  • IXYS CORPORATION|V IXFB52N90P