SIHU7N60E-GE3 - Vishay / Siliconix

Mfr. #:
SIHU7N60E-GE3
Description:
MOSFET 600V Vds 30V Vgs IPAK (TO-251)
Lifecycle:
New from this manufacturer.
Delivery
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Payment
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SIHU7N60E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-251-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Pd - Power Dissipation: 78 W
Factory Pack Quantity: 75
Id - Continuous Drain Current: 7 A
Vds - Drain-Source Breakdown Voltage: 609 V
Rds On - Drain-Source Resistance: 600 mOhms
Vgs th - Gate-Source Threshold Voltage: 4 V
Vgs - Gate-Source Voltage: 30 V
Typical Turn-Off Delay Time: 24 ns
Qg - Gate Charge: 20 nC
Fall Time: 14 ns
Typical Turn-On Delay Time: 13 ns
Rise Time: 13 ns
Number of Channels: 1 Channel
Unit Weight: 0.011640 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHU7N60E-GE3 Price & Stock

Vishay SIHU7N60E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
element14 APAC22836391,45713.1613.1610.429.099.092020-01-11T02:20:55Z
Digi-KeySIHU7N60E-GE3-ND-----6.332020-01-13T13:58:39Z
AvnetSIHU7N60E-GE3-----6.482020-01-11T02:16:35Z
TTISIHU7N60E-GE3------2020-01-11T10:17:56Z
Farnell22836391,638-5.585.555.455.422020-01-11T02:52:25Z
Newark 363W41201,4577.857.857.857.857.852020-01-11T03:41:16Z
Newark68W7074-6.796.796.796.796.422020-01-11T03:41:16Z
Newark68W7073-16.0116.0112.758.478.472020-01-11T03:41:16Z
Avnet EuropeSIHU7N60E-GE3-8.857.526.206.206.202020-01-13T07:27:24Z
NexxonSIHU7N60E-GE3Contact-----2018-02-27T00:44:39Z
North Star MicroSIHU7N60E-GE3Contact-----2015-05-20T05:52:12Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHU7N60E-GE3 due to regional differences or acquisition. SIHU7N60E-GE3 may also be known as the following names:

  • VIS SIHU7N60E-GE3
  • VISH SIHU7N60E-GE3
  • VISHAY INTERTECHNOLOGY INC SIHU7N60E-GE3
  • VISHA SIHU7N60E-GE3
  • VISHAY THIN FILM SIHU7N60E-GE3
  • VISHAY INTERTECHNOLOGY SIHU7N60E-GE3
  • VISHY SIHU7N60E-GE3
  • VISAHY SIHU7N60E-GE3
  • VISH/IR SIHU7N60E-GE3
  • VSHY SIHU7N60E-GE3
  • VSH SIHU7N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHU7N60E-GE3
  • VISHAY ELECTRONIC SIHU7N60E-GE3
  • VSHAY SIHU7N60E-GE3
  • VISHAY FOIL RESISTORS SIHU7N60E-GE3
  • VISHAY AMERICAS INC SIHU7N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHU7N60E-GE3
  • VISHAY AMERICAS SIHU7N60E-GE3
  • VISHAY ELECTRO-FILMS SIHU7N60E-GE3
  • VISHAY COMPONENTS SIHU7N60E-GE3
  • Vishay Semiconductors SIHU7N60E-GE3
  • VISHAY COMPONENTS NEDERLAND SIHU7N60E-GE3
  • VISHAY INTERTEC SIHU7N60E-GE3
  • VISHAY FOIL RESISTORS / VPG SIHU7N60E-GE3
  • VISHAY OPTO SIHU7N60E-GE3
  • Vishay Intertechnology Inc. SIHU7N60E-GE3