Mfr. #:
CGH60030D-GP4
Description:
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt
Lifecycle:
New from this manufacturer.
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CGH60030D-GP4 Information

GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Specifications

RoHS: Y
Brand: Wolfspeed / Cree
Packaging: Waffle
Subcategory: Transistors
Mounting Style: SMD/SMT
Product Category: RF JFET Transistors
Product Type: RF JFET Transistors
Transistor Polarity: N-Channel
Transistor Type: HEMT
Product: GaN HEMT
Technology: GaN
Configuration: Dual
Package / Case: Die
Manufacturer: Cree, Inc.
Width: 920 um
Rds On - Drain-Source Resistance: 500 mOhms
Operating Frequency: 4 GHz to 6 GHz
Output Power: 30 W
Id - Continuous Drain Current: 3 A
Number of Channels: 2 Channel
Gain: 15 dB
Vds - Drain-Source Breakdown Voltage: 120 V
Height: 100 um
Factory Pack Quantity: 10
Length: 1.66 mm
Vgs th - Gate-Source Threshold Voltage: - 3 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Typical Turn-Off Delay Time: -
Rise Time: -
Maximum Drain Gate Voltage: -
Minimum Operating Temperature: -
P1dB - Compression Point: -
Operating Temperature Range: -
Fall Time: -
Development Kit: -
Class: -
Maximum Operating Temperature: -
Gate-Source Cutoff Voltage: -
Pd - Power Dissipation: -
Application: -
NF - Noise Figure: -

CGH60030D-GP4 Price & Stock

Wolfspeed CGH60030D-GP4 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyCGH60030D-ND150-586.44586.44586.44586.442019-12-08T13:51:07Z
Richardson RFPDCGH60030D-GP4---586.41586.41586.412019-12-07T02:31:28Z

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Alternate Names

Wolfspeed has several brands around the world that may have alternate names for CGH60030D-GP4 due to regional differences or acquisition. CGH60030D-GP4 may also be known as the following names: