STF140N8F7 - STMicroelectronics

Mfr. #:
STF140N8F7
Description:
MOSFET Nchanl 80 V 0035 Ohm typ 64 A Pwr MOSFET
Lifecycle:
New from this manufacturer.
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STF140N8F7 Information

STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
STripFETâ„¢ F7 Power MOSFETs
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.
STMicroelectronics STripFET VII Power MOSFETs

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220-3
Configuration: Single
Technology: Si
Tradename: STripFET
Manufacturer: STMicroelectronics
Brand: STMicroelectronics
Series: STF140N8F7
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Qg - Gate Charge: 96 nC
Typical Turn-Off Delay Time: 82 ns
Vds - Drain-Source Breakdown Voltage: 80 V
Id - Continuous Drain Current: 64 A
Rise Time: 51 ns
Fall Time: 44 ns
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Rds On - Drain-Source Resistance: 4.3 mOhms
Pd - Power Dissipation: 35 W
Typical Turn-On Delay Time: 26 ns
Vgs - Gate-Source Voltage: 20 V
Factory Pack Quantity: 1000
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.011640 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

STF140N8F7 Price & Stock

STMicroelectronics STF140N8F7 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
AvnetSTF140N8F7----13.7511.712019-11-14T06:33:21Z
Newark19X6176----11.9411.942019-11-14T02:44:45Z
LTL Group45094171,425-----2019-11-10T03:06:17Z
GreenTree ElectronicsSTF140N8F75,000-----2019-11-06T14:43:13Z

AD5242BRUZ1M distributor

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STF140N8F7 Datasheet(PDF) - STMicroelectronics
STF140N8F7 MOSFET. Datasheet pdf. Equivalent
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Alternate Names

STMicroelectronics has several brands around the world that may have alternate names for STF140N8F7 due to regional differences or acquisition. STF140N8F7 may also be known as the following names:

  • ST MICRO STF140N8F7
  • STM STF140N8F7
  • SGS STF140N8F7
  • SGS THOMSON STF140N8F7
  • INMOS STF140N8F7
  • SGS THOMPSON STF140N8F7
  • STMICROE STF140N8F7
  • STMICR STF140N8F7
  • SESCOSEM STF140N8F7
  • ST8 STF140N8F7
  • ST MIC STF140N8F7
  • WAFERSCALE STF140N8F7
  • SGS-ATES STF140N8F7
  • STMICROELECTRON STF140N8F7
  • ST MICROELECTRONICS SEMI STF140N8F7
  • ST/SGS STF140N8F7
  • SGST STF140N8F7
  • THOMS STF140N8F7
  • STMICROELECT STF140N8F7
  • WAFERSCALE INTEGRATION INC STF140N8F7
  • STMICROEL STF140N8F7
  • SGS-Thomson Microelectronics STF140N8F7
  • ST MICROELECTRO STF140N8F7
  • SGS THOMP STF140N8F7
  • SGS/ST STF140N8F7
  • ST Microeletronics STF140N8F7