SIHP23N60E-GE3 - Vishay / Siliconix

Mfr. #:
SIHP23N60E-GE3
Description:
MOSFET 600V Vds 30V Vgs TO-220AB
Lifecycle:
New from this manufacturer.
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SIHP23N60E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220AB-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Typical Turn-Off Delay Time: 66 ns
Qg - Gate Charge: 63 nC
Vds - Drain-Source Breakdown Voltage: 600 V
Factory Pack Quantity: 50
Vgs th - Gate-Source Threshold Voltage: 4 V
Rise Time: 38 ns
Fall Time: 34 ns
Vgs - Gate-Source Voltage: 30 V
Id - Continuous Drain Current: 23 A
Pd - Power Dissipation: 227 W
Typical Turn-On Delay Time: 22 ns
Rds On - Drain-Source Resistance: 158 mOhms
Number of Channels: 1 Channel
Unit Weight: 0.211644 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHP23N60E-GE3 Price & Stock

Vishay SIHP23N60E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHP23N60E-GE3-ND47921.6719.4714.7211.2110.062019-12-10T13:56:00Z
Mouser78-SIHP23N60E-GE34721.6718.3715.9011.4011.402019-12-09T23:33:19Z
TTISIHP23N60E-GE3---11.9610.0610.062019-12-10T07:27:30Z
AvnetSIHP23N60E-GE3----11.9110.492019-12-07T01:49:54Z
Avnet EuropeSIHP23N60E-GE3-14.9313.4412.0912.0912.092019-12-10T07:58:32Z
LTL Group4285392------2019-12-11T02:07:10Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHP23N60E-GE3 due to regional differences or acquisition. SIHP23N60E-GE3 may also be known as the following names:

  • VIS SIHP23N60E-GE3
  • VISH SIHP23N60E-GE3
  • VISHAY INTERTECHNOLOGY INC SIHP23N60E-GE3
  • VISHA SIHP23N60E-GE3
  • VISHAY THIN FILM SIHP23N60E-GE3
  • VISHAY INTERTECHNOLOGY SIHP23N60E-GE3
  • VISHY SIHP23N60E-GE3
  • VISAHY SIHP23N60E-GE3
  • VISH/IR SIHP23N60E-GE3
  • VSHY SIHP23N60E-GE3
  • VSH SIHP23N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHP23N60E-GE3
  • VISHAY ELECTRONIC SIHP23N60E-GE3
  • VSHAY SIHP23N60E-GE3
  • VISHAY FOIL RESISTORS SIHP23N60E-GE3
  • VISHAY AMERICAS INC SIHP23N60E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHP23N60E-GE3
  • VISHAY AMERICAS SIHP23N60E-GE3
  • VISHAY ELECTRO-FILMS SIHP23N60E-GE3
  • VISHAY COMPONENTS SIHP23N60E-GE3
  • Vishay Semiconductors SIHP23N60E-GE3
  • VISHAY COMPONENTS NEDERLAND SIHP23N60E-GE3
  • VISHAY INTERTEC SIHP23N60E-GE3
  • VISHAY FOIL RESISTORS / VPG SIHP23N60E-GE3
  • VISHAY OPTO SIHP23N60E-GE3
  • Vishay Intertechnology Inc. SIHP23N60E-GE3