Mfr. #:
MMDT5551-7-F
Description:
Bipolar Transistors - BJT 160V 200mW
Lifecycle:
New from this manufacturer.
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MMDT5551-7-F Information

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Specifications

RoHS: Y
Subcategory: Transistors
Package / Case: SOT-363-6
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: NPN
Series: MMDT55
Configuration: Dual
Brand: Diodes Incorporated
Manufacturer: Diodes Incorporated
Product Category: Bipolar Transistors - BJT
Product Type: BJTs - Bipolar Transistors
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 300 MHz
DC Current Gain hFE Max: 250
DC Collector/Base Gain hfe Min: 80
Pd - Power Dissipation: 200 mW
Length: 2.2 mm
Collector- Base Voltage VCBO: 180 V
Collector- Emitter Voltage VCEO Max: 160 V
Width: 1.35 mm
Height: 1 mm
Collector-Emitter Saturation Voltage: 0.2 V
Maximum DC Collector Current: 0.2 A
Continuous Collector Current: 0.2 A
Unit Weight: 0.000212 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

MMDT5551-7-F Price & Stock

Multicomp MMDT5551-7-F pricing and available inventory.

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Alternate Names

Multicomp has several brands around the world that may have alternate names for MMDT5551-7-F due to regional differences or acquisition. MMDT5551-7-F may also be known as the following names:

  • MULTICOMP (FORMERLY FROM SPC) MMDT5551-7-F
  • MULTICOMP CORPORATION MMDT5551-7-F
  • MULTCMP MMDT5551-7-F
  • MULTICOMP PRO MMDT5551-7-F
  • MULTICOMP FARNELL MMDT5551-7-F
  • SPC Technology/ Multicomp MMDT5551-7-F
  • MULTICOMP (FORMERLY FROM VOLTREX) MMDT5551-7-F
  • MULTICOMP(RoHS) MMDT5551-7-F
  • MULTICOMP/OTHER MFR MMDT5551-7-F
  • Multicomp [SPC] MMDT5551-7-F