CDM3-800 TR13 - Central Semiconductor

Mfr. #:
CDM3-800 TR13
Description:
MOSFET N-Ch 3A 800V PFC FET 11.3nC 3.8Ohm 80W
Lifecycle:
New from this manufacturer.
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CDM3-800 TR13 Information

CDMxx Silicon N-Channel Power MOSFETs
Central Semiconductor CDMxx Silicon N-Channel Power MOSFETs are designed for high voltage, fast switching applications like Power Factor Correction (PFC), lighting and power inverters. These MOSFETs combine high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency.Learn More
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more

Specifications

RoHS: Y
Package / Case: TO-252-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Manufacturer: Central Semiconductor
Brand: Central Semiconductor
Part # Aliases: CDM3-800 PBFREE TR13
Series: CDM
Vds - Drain-Source Breakdown Voltage: 800 V
Pd - Power Dissipation: 80 W
Vgs - Gate-Source Voltage: 30 V
Rds On - Drain-Source Resistance: 3.8 Ohms
Id - Continuous Drain Current: 3 A
Factory Pack Quantity: 2500
Fall Time: 25 ns
Typical Turn-Off Delay Time: 25 ns
Rise Time: 23 ns
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 11.3 nC
Typical Turn-On Delay Time: 10 ns
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.139332 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

CDM3-800 TR13 Price & Stock

Central Semiconductor CDM3-800 TR13 pricing and available inventory.

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Alternate Names

Central Semiconductor has several brands around the world that may have alternate names for CDM3-800 TR13 due to regional differences or acquisition. CDM3-800 TR13 may also be known as the following names:

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