SIHB12N60ET5-GE3 - Vishay / Siliconix

Mfr. #:
SIHB12N60ET5-GE3
Description:
MOSFET N-Channel 600V
Lifecycle:
New from this manufacturer.
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SIHB12N60ET5-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Width: 9.65 mm
Factory Pack Quantity: 800
Vds - Drain-Source Breakdown Voltage: 650 V
Height: 4.83 mm
Vgs th - Gate-Source Threshold Voltage: 4 V
Rds On - Drain-Source Resistance: 380 mOhms
Typical Turn-Off Delay Time: 35 ns
Vgs - Gate-Source Voltage: 30 V
Qg - Gate Charge: 29 nC
Rise Time: 19 ns
Fall Time: 19 ns
Pd - Power Dissipation: 147 W
Typical Turn-On Delay Time: 14 ns
Id - Continuous Drain Current: 12 A
Length: 10.67 mm
Number of Channels: 1 Channel
Unit Weight: 0.077603 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHB12N60ET5-GE3 Price & Stock

Vishay SIHB12N60ET5-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHB12N60ET5-GE3-ND80015.3813.7910.157.296.662020-02-04T16:06:00Z
AvnetSIHB12N60ET5-GE3----7.576.672020-02-04T03:10:39Z
RutronikTMOS20292,400---10.217.882020-01-24T03:28:10Z
LTL Group6949934800-----2020-01-31T03:27:32Z
Sierra ICSIHB12N60ET5-GE3Contact-----2019-12-16T00:48:56Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHB12N60ET5-GE3 due to regional differences or acquisition. SIHB12N60ET5-GE3 may also be known as the following names:

  • VIS SIHB12N60ET5-GE3
  • VISH SIHB12N60ET5-GE3
  • VISHAY INTERTECHNOLOGY INC SIHB12N60ET5-GE3
  • VISHA SIHB12N60ET5-GE3
  • VISHAY THIN FILM SIHB12N60ET5-GE3
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  • VISHY SIHB12N60ET5-GE3
  • VISAHY SIHB12N60ET5-GE3
  • VISH/IR SIHB12N60ET5-GE3
  • VSHY SIHB12N60ET5-GE3
  • VSH SIHB12N60ET5-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHB12N60ET5-GE3
  • VISHAY ELECTRONIC SIHB12N60ET5-GE3
  • VSHAY SIHB12N60ET5-GE3
  • VISHAY FOIL RESISTORS SIHB12N60ET5-GE3
  • VISHAY AMERICAS INC SIHB12N60ET5-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHB12N60ET5-GE3
  • VISHAY AMERICAS SIHB12N60ET5-GE3
  • VISHAY ELECTRO-FILMS SIHB12N60ET5-GE3
  • VISHAY COMPONENTS SIHB12N60ET5-GE3
  • Vishay Semiconductors SIHB12N60ET5-GE3
  • VISHAY COMPONENTS NEDERLAND SIHB12N60ET5-GE3
  • VISHAY INTERTEC SIHB12N60ET5-GE3
  • VISHAY FOIL RESISTORS / VPG SIHB12N60ET5-GE3
  • VISHAY OPTO SIHB12N60ET5-GE3
  • Vishay Intertechnology Inc. SIHB12N60ET5-GE3