Mfr. #:
IXTH1N200P3
Description:
MOSFET 2000V/1A HV Power MOSFET, TO-247
Lifecycle:
New from this manufacturer.
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IXTH1N200P3 Information

2000V High Voltage Power MOSFETs
IXYS 2000V High Voltage Power MOSFETs are the highest voltage Power MOSFET product line in the industry in international standard size packages. The current ratings range from 0.6A to 3A. They are specifically designed to address high blocking voltage and high voltage packages.Learn More

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-247-3
Configuration: Single
Technology: Si
Series: Polar3
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Manufacturer: IXYS
Brand: IXYS
Channel Mode: Enhancement
Fall Time: 80 ns
Forward Transconductance - Min: 400 mS
Rds On - Drain-Source Resistance: 40 Ohms
Typical Turn-Off Delay Time: 37 ns
Factory Pack Quantity: 30
Rise Time: 26 ns
Qg - Gate Charge: 23.5 nC
Vgs - Gate-Source Voltage: 20 V
Vds - Drain-Source Breakdown Voltage: 2 kV
Vgs th - Gate-Source Threshold Voltage: 2 V
Typical Turn-On Delay Time: 16 ns
Pd - Power Dissipation: 125 W
Id - Continuous Drain Current: 1 A
Unit Weight: 0.056438 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXTH1N200P3 Price & Stock

IXYS IXTH1N200P3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXTH1N200P3-ND12742.0938.0430.0723.8823.002020-02-28T14:11:08Z
Mouser747-IXTH1N200P319342.0938.0430.0730.0730.072020-02-28T22:21:34Z
TMEIXTH1N200P3-36.2428.8425.9125.9125.912020-02-29T09:09:33Z
Abacus TechnologiesIXTH1N200P3400-----2020-02-24T20:07:32Z
Sierra ICIXTH1N200P3Contact-----2019-12-16T00:48:56Z

AD5242BRUZ1M distributor

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IXTH1N200P3Datasheet(PDF) - IXYS Corporation

Alternate Names

IXYS has several brands around the world that may have alternate names for IXTH1N200P3 due to regional differences or acquisition. IXTH1N200P3 may also be known as the following names:

  • IXYS CORPORATION IXTH1N200P3
  • IXY IXTH1N200P3
  • IXYS CORP IXTH1N200P3
  • IXYS SEMICONDUCTOR IXTH1N200P3
  • IXYS Integrated Circuits Division IXTH1N200P3
  • IXYS Integrated Circuits/Clare IXTH1N200P3
  • IXYS GMBH IXTH1N200P3
  • IXYS-DIRECTED ENERGY IXTH1N200P3
  • IXYS Integrated Circuits Division Inc IXTH1N200P3
  • IXYS SEMICONDUCTOR GMBH IXTH1N200P3
  • IXYS (VA) IXTH1N200P3
  • IXYS CORPO IXTH1N200P3
  • IXYS Semiconducter GmbH IXTH1N200P3
  • IXYS SEMICONDUCTOR CORP IXTH1N200P3
  • IXYS INTEGCIRCUITS DIV(CLARE) IXTH1N200P3
  • IXYS Colorado (IXYS RF Division) IXTH1N200P3
  • IXYS SEMICOND IXTH1N200P3
  • IXYS Integrated Circuits IXTH1N200P3
  • Zilog/IXYS IXTH1N200P3
  • IXYSCOR IXTH1N200P3
  • Clare/LXYS Corporation IXTH1N200P3
  • IXYS-RF IXTH1N200P3
  • CP CLAIRE IXTH1N200P3
  • Clare (IXYS) IXTH1N200P3
  • IXYS CORPORATION|V IXTH1N200P3