- Mfr. #:
- ZXMN6A08E6QTA
- Description:
- MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
ZXMN6A08E6QTA Information
- Automotive MOSFETs
- Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.
Specifications
| Series: | ZXMN6 |
|---|---|
| RoHS: | Y |
| Configuration: | Single |
| Technology: | Si |
| Package / Case: | SOT-26-6 |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Brand: | Diodes Incorporated |
| Qualification: | AEC-Q101 |
| Pd - Power Dissipation: | 8.8 W |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Forward Transconductance - Min: | 6.6 S |
| Qg - Gate Charge: | 5.8 nC |
| Fall Time: | 4.6 ns |
| Factory Pack Quantity: | 3000 |
| Vgs - Gate-Source Voltage: | 20 V |
| Typical Turn-On Delay Time: | 2.6 ns |
| Id - Continuous Drain Current: | 2.5 A |
| Rise Time: | 2.1 ns |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| Typical Turn-Off Delay Time: | 12.3 ns |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
ZXMN6A08E6QTA Price & Stock
Diodes Inc. ZXMN6A08E6QTA pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | ZXMN6A08E6QTADICT-ND | 3,319 | 1.20 | 1.06 | 0.723 | 0.514 | 0.514 | 2020-03-08T12:59:26Z |
| Digi-Key | ZXMN6A08E6QTADIDKR-ND | 3,319 | 1.20 | 1.06 | 0.723 | 0.514 | 0.514 | 2020-03-08T12:59:26Z |
| Digi-Key | ZXMN6A08E6QTADITR-ND | 3,000 | - | - | - | - | 0.434 | 2020-03-08T12:59:26Z |
| Mouser | 621-ZXMN6A08E6QTA | 2,644 | 1.18 | 0.986 | 0.636 | 0.509 | 0.509 | 2020-03-06T23:28:26Z |
| Avnet | ZXMN6A08E6QTA | - | - | - | - | - | - | 2020-03-07T03:02:58Z |
| Avnet Europe | ZXMN6A08E6QTA | - | - | - | - | - | 0.759 | 2020-03-09T08:04:27Z |
| Nexxon | ZXMN6A08E6QTA | Contact | - | - | - | - | - | 2018-02-27T00:44:39Z |
| Sierra IC | ZXMN6A08E6QTA | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
AD5242BRUZ1M distributor
- ZXMN6A08E6QTA Diodes Incorporated - Digikey
- ZXMN6A08E6QTA Diodes Incorporated - Mouser Electronics
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- Diodes Incorporated ZXMN6A08E6QTA MOSFETs
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- Diodes Inc. - Power MOSFET, N Channel, 60 V - Farnell IsraelZXMN6A08E6QTA Diodes Inc., Power MOSFET, N ... - Farnell
- ZXMN6A08E6QTA Datasheet(PDF) - Diodes Incorporated
- Power Mosfet SOT-26-6 - Oneyac Electronics
Alternate Names
Diodes Inc. has several brands around the world that may have alternate names for ZXMN6A08E6QTA due to regional differences or acquisition. ZXMN6A08E6QTA may also be known as the following names:
- DIODES INCORPORATED ZXMN6A08E6QTA
- DIODE ZXMN6A08E6QTA
- DII ZXMN6A08E6QTA
- DIO ZXMN6A08E6QTA
- DIODE INC ZXMN6A08E6QTA
- DC COMPONENTS ZXMN6A08E6QTA
- DIOD ZXMN6A08E6QTA
- YENYO ZXMN6A08E6QTA
- MICRO COM ZXMN6A08E6QTA
- Diodes Zetex ZXMN6A08E6QTA
- MICRO ELECTRONIC INS ZXMN6A08E6QTA
- DIODE INCORPORATED ZXMN6A08E6QTA
- DIODES ZET ZXMN6A08E6QTA
- DIODSE ZXMN6A08E6QTA
- DINC ZXMN6A08E6QTA
- DIOINC ZXMN6A08E6QTA
- FORMOSA MS ZXMN6A08E6QTA
- DIODES INC/VISHAY ZXMN6A08E6QTA
- ZETEXDIODES ZXMN6A08E6QTA
- DIODES INC/VISH ZXMN6A08E6QTA
- LITE-ON Semiconductor Corp ZXMN6A08E6QTA
- ZETEX ZXMN6A08E6QTA
- DIODES INC (VA) ZXMN6A08E6QTA
- Diodes-Inc-Zetex ZXMN6A08E6QTA
- ZETEX (DIODES INC) ZXMN6A08E6QTA