IPG16N10S4L61AATMA1 - Infineon Technologies

Mfr. #:
IPG16N10S4L61AATMA1
Description:
MOSFET N-CHANNEL_100+
Lifecycle:
New from this manufacturer.
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IPG16N10S4L61AATMA1 Information

Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Inductive Wireless Charging – In-Car Charging
Infineon Technologies Inductive Wireless Charging – In-Car Charging allows for placing devices in a designated area to charge without a wired connection. Automotive inductive wireless charging is growing in the latest generation of cars. In fact, it’s predicted that most cars will have the feature in the very near future.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.

Specifications

Package / Case: TDSON-8
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPG16N10S4L-61A SP001102932
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 78 mOhms
Factory Pack Quantity: 5000
Length: 5.9 mm
Width: 5.15 mm
Typical Turn-Off Delay Time: 5 ns
Fall Time: 4 ns
Pd - Power Dissipation: 29 W
Typical Turn-On Delay Time: 2 ns
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Vgs - Gate-Source Voltage: 16 V
Id - Continuous Drain Current: 16 A
Qg - Gate Charge: 11 nC
Vds - Drain-Source Breakdown Voltage: 100 V
Height: 1.27 mm
Vgs th - Gate-Source Threshold Voltage: 1.1 V
Rise Time: 1 ns
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IPG16N10S4L61AATMA1 Price & Stock

Infineon IPG16N10S4L61AATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Rochester ElectronicsIPG16N10S4L61AATMA124,6153.133.132.822.582.582019-12-06T10:01:40Z
Mouser726-IPG16N10S4L61AAT3,1287.136.134.713.292.912019-12-06T22:54:47Z
Arrow ElectronicsIPG16N10S4L61AATMA15,000----2.842019-12-06T15:55:35Z
Digi-KeyIPG16N10S4L61AATMA1-ND-----2.852019-12-06T13:57:52Z
VericalIPG16N10S4L61AATMA15,000----2.522019-12-06T18:10:53Z
AvnetIPG16N10S4L61AATMA1-----3.042019-12-06T04:29:54Z
Avnet EuropeSP001102932-----4.572019-12-06T08:24:18Z
LTL Group40476441,132-----2019-12-06T09:29:21Z
Classic ComponentsIPG16N10S4L61AATMA17,700-----2019-11-12T23:57:55Z
Sierra ICIPG16N10S4L61AATMA1Contact-----2019-09-03T21:05:22Z

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