Mfr. #:
IXYH75N65C3H1
Description:
IGBT Transistors 650V/170A XPT C3-Class TO-247
Lifecycle:
New from this manufacturer.
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IXYH75N65C3H1 Information

Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More

Specifications

RoHS: Y
Tradename: XPT
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-247AD-3
Configuration: Single
Technology: Si
Manufacturer: IXYS
Brand: IXYS
Series: IXYH75N65
Subcategory: IGBTs
Product Type: IGBT Transistors
Product Category: IGBT Transistors
Pd - Power Dissipation: 750 W
Collector- Emitter Voltage VCEO Max: 650 V
Maximum Gate Emitter Voltage: 30 V
Factory Pack Quantity: 30
Continuous Collector Current Ic Max: 170 A
Continuous Collector Current at 25 C: 170 A
Gate-Emitter Leakage Current: 100 nA
Collector-Emitter Saturation Voltage: 1.8 V
Unit Weight: 1.340411 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IXYH75N65C3H1 Price & Stock

IXYS IXYH75N65C3H1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXYH75N65C3H1-ND4080.0573.5760.9950.7050.702020-04-13T13:17:11Z
iodPartsIXYH75N65C3H146-----2020-04-10T11:39:54Z
TMEIXYH75N65C3H13677.9861.7755.5055.5055.502020-04-13T09:10:59Z
Sierra ICIXYH75N65C3H1Contact-----2020-03-06T17:01:28Z

AD5242BRUZ1M distributor

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Oct 15, 2020
IXYH75N65C3H1 Datasheet(PDF) - IXYS Corporation
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IXYH75N65C3H1 IGBT Datasheet pdf - DatasheetsPDF.com
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IXYH75N65C3H1 Datasheet PDF - Datasheet4U.com

Alternate Names

IXYS has several brands around the world that may have alternate names for IXYH75N65C3H1 due to regional differences or acquisition. IXYH75N65C3H1 may also be known as the following names:

  • IXYS CORPORATION IXYH75N65C3H1
  • IXY IXYH75N65C3H1
  • IXYS CORP IXYH75N65C3H1
  • IXYS SEMICONDUCTOR IXYH75N65C3H1
  • IXYS Integrated Circuits Division IXYH75N65C3H1
  • IXYS Integrated Circuits/Clare IXYH75N65C3H1
  • IXYS GMBH IXYH75N65C3H1
  • IXYS-DIRECTED ENERGY IXYH75N65C3H1
  • IXYS Integrated Circuits Division Inc IXYH75N65C3H1
  • IXYS SEMICONDUCTOR GMBH IXYH75N65C3H1
  • IXYS (VA) IXYH75N65C3H1
  • IXYS CORPO IXYH75N65C3H1
  • IXYS Semiconducter GmbH IXYH75N65C3H1
  • IXYS SEMICONDUCTOR CORP IXYH75N65C3H1
  • IXYS INTEGCIRCUITS DIV(CLARE) IXYH75N65C3H1
  • IXYS Colorado (IXYS RF Division) IXYH75N65C3H1
  • IXYS SEMICOND IXYH75N65C3H1
  • IXYS Integrated Circuits IXYH75N65C3H1
  • Zilog/IXYS IXYH75N65C3H1
  • IXYSCOR IXYH75N65C3H1
  • Clare/LXYS Corporation IXYH75N65C3H1
  • IXYS-RF IXYH75N65C3H1
  • CP CLAIRE IXYH75N65C3H1
  • Clare (IXYS) IXYH75N65C3H1
  • IXYS CORPORATION|V IXYH75N65C3H1